Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy

Gespeichert in:

Autor*in:	Ferro, Gabriel [verfasserIn] Okumura, Hajime Yoshida, Sadafumi

Format:	Artikel

Erschienen:	2000

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 209(2000), 2-3, Seite 415-418
Übergeordnetes Werk:	volume:209 ; year:2000 ; number:2-3 ; pages:415-418 ; extent:4

Katalog-ID:	OLC1582650160

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Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy

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