On the relation between defect density and dopant concentration in amorphous silicon films

Gespeichert in:

Autor*in:	Caputo, Domenico [verfasserIn] de Cesare, Giampiero Irrera, Fernanda Nascetti, Augusto Palma, Fabrizio

Format:	Artikel

Erschienen:	2000

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Journal of non-crystalline solids - Amsterdam : North-Holland Publ. Co., 1968, 266(2000), A, Seite 565-568
Übergeordnetes Werk:	volume:266 ; year:2000 ; supplement:A ; pages:565-568 ; extent:4

Katalog-ID:	OLC1584772557

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allfieldsSound	SW001127 (DE-627)OLC1584772557 (DE-599)GBVOLC1584772557 DE-627 ger DE-627 rakwb 660 670 Caputo, Domenico verfasserin aut On the relation between defect density and dopant concentration in amorphous silicon films 2000 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier de Cesare, Giampiero oth Irrera, Fernanda oth Nascetti, Augusto oth Palma, Fabrizio oth Enthalten in Journal of non-crystalline solids Amsterdam : North-Holland Publ. Co., 1968 266(2000), A, Seite 565-568 (DE-627)129356719 (DE-600)160099-0 (DE-576)014728737 0022-3093 nnns volume:266 year:2000 supplement:A pages:565-568 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_20 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4036 GBV_ILN_4126 GBV_ILN_4155 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4315 AR 266 2000 A 565-568 4
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On the relation between defect density and dopant concentration in amorphous silicon films

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