LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs

Gespeichert in:

Autor*in:	Ushiki, T. [verfasserIn] Ishino, H. Ohmi, T.

Format:	Artikel

Erschienen:	2000

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 21(2000), 12, Seite 610-612
Übergeordnetes Werk:	volume:21 ; year:2000 ; number:12 ; pages:610-612 ; extent:3

Katalog-ID:	OLC1585820385

Internformat


LEADER	01000caa a22002652 4500
001	OLC1585820385
003	DE-627
005	20230705205334.0
007	tu
008	001220s2000 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a SW001214
035			\|a (DE-627)OLC1585820385
035			\|a (DE-599)GBVOLC1585820385
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
100	1		\|a Ushiki, T. \|e verfasserin \|4 aut
245	1	0	\|a LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs
264		1	\|c 2000
300			\|a 3
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Ishino, H. \|4 oth
700	1		\|a Ohmi, T. \|4 oth
773	0	8	\|i Enthalten in \|t IEEE electron device letters \|d New York, NY : IEEE, 1980 \|g 21(2000), 12, Seite 610-612 \|w (DE-627)129618993 \|w (DE-600)245158-X \|w (DE-576)015122115 \|x 0193-8576 \|7 nnns
773	1	8	\|g volume:21 \|g year:2000 \|g number:12 \|g pages:610-612 \|g extent:3
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_32
912			\|a GBV_ILN_70
912			\|a GBV_ILN_100
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2002
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2016
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4309
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4314
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4317
912			\|a GBV_ILN_4318
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 21 \|j 2000 \|e 12 \|h 610-612 \|g 3

Indexfelder

author_variant	t u tu
matchkey_str	article:01938576:2000----::etrslcneieefcosatnsiaeilultolwrqecniehrceitcipri
hierarchy_sort_str	2000
publishDate	2000
allfields	SW001214 (DE-627)OLC1585820385 (DE-599)GBVOLC1585820385 DE-627 ger DE-627 rakwb 620 Ushiki, T. verfasserin aut LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishino, H. oth Ohmi, T. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 21(2000), 12, Seite 610-612 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:21 year:2000 number:12 pages:610-612 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 21 2000 12 610-612 3
spelling	SW001214 (DE-627)OLC1585820385 (DE-599)GBVOLC1585820385 DE-627 ger DE-627 rakwb 620 Ushiki, T. verfasserin aut LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishino, H. oth Ohmi, T. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 21(2000), 12, Seite 610-612 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:21 year:2000 number:12 pages:610-612 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 21 2000 12 610-612 3
allfields_unstemmed	SW001214 (DE-627)OLC1585820385 (DE-599)GBVOLC1585820385 DE-627 ger DE-627 rakwb 620 Ushiki, T. verfasserin aut LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishino, H. oth Ohmi, T. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 21(2000), 12, Seite 610-612 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:21 year:2000 number:12 pages:610-612 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 21 2000 12 610-612 3
allfieldsGer	SW001214 (DE-627)OLC1585820385 (DE-599)GBVOLC1585820385 DE-627 ger DE-627 rakwb 620 Ushiki, T. verfasserin aut LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishino, H. oth Ohmi, T. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 21(2000), 12, Seite 610-612 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:21 year:2000 number:12 pages:610-612 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 21 2000 12 610-612 3
allfieldsSound	SW001214 (DE-627)OLC1585820385 (DE-599)GBVOLC1585820385 DE-627 ger DE-627 rakwb 620 Ushiki, T. verfasserin aut LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs 2000 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishino, H. oth Ohmi, T. oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 21(2000), 12, Seite 610-612 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:21 year:2000 number:12 pages:610-612 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 21 2000 12 610-612 3
source	Enthalten in IEEE electron device letters 21(2000), 12, Seite 610-612 volume:21 year:2000 number:12 pages:610-612 extent:3
sourceStr	Enthalten in IEEE electron device letters 21(2000), 12, Seite 610-612 volume:21 year:2000 number:12 pages:610-612 extent:3
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE electron device letters
authorswithroles_txt_mv	Ushiki, T. @@aut@@ Ishino, H. @@oth@@ Ohmi, T. @@oth@@
publishDateDaySort_date	2000-01-01T00:00:00Z
hierarchy_top_id	129618993
dewey-sort	3620
id	OLC1585820385
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1585820385</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230705205334.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">001220s2000 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW001214</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1585820385</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1585820385</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ushiki, T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ishino, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ohmi, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">21(2000), 12, Seite 610-612</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:21</subfield><subfield code="g">year:2000</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:610-612</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">21</subfield><subfield code="j">2000</subfield><subfield code="e">12</subfield><subfield code="h">610-612</subfield><subfield code="g">3</subfield></datafield></record></collection>
author	Ushiki, T.
spellingShingle	Ushiki, T. ddc 620 LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs
authorStr	Ushiki, T.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129618993
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0193-8576
topic_title	620 LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs
topic	ddc 620
topic_unstemmed	ddc 620
topic_browse	ddc 620
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	h i hi t o to
hierarchy_parent_title	IEEE electron device letters
hierarchy_parent_id	129618993
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE electron device letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129618993 (DE-600)245158-X (DE-576)015122115
title	LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs
ctrlnum	(DE-627)OLC1585820385 (DE-599)GBVOLC1585820385
title_full	LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs
author_sort	Ushiki, T.
journal	IEEE electron device letters
journalStr	IEEE electron device letters
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2000
contenttype_str_mv	txt
container_start_page	610
author_browse	Ushiki, T.
container_volume	21
physical	3
class	620
format_se	Aufsätze
author-letter	Ushiki, T.
dewey-full	620
title_sort	letters - silicon devices - effect of starting soi material quality on low-frequency noise characteristics in partially depleted floating body soi mosfets
title_auth	LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2061 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700
container_issue	12
title_short	LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs
remote_bool	false
author2	Ishino, H. Ohmi, T.
author2Str	Ishino, H. Ohmi, T.
ppnlink	129618993
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth
up_date	2024-07-03T18:21:51.285Z
_version_	1803583132833677312
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1585820385</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230705205334.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">001220s2000 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW001214</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1585820385</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1585820385</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ushiki, T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">LETTERS - Silicon Devices - Effect of Starting SOI Material Quality on Low-Frequency Noise Characteristics in Partially Depleted Floating Body SOI MOSFETs</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ishino, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ohmi, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">21(2000), 12, Seite 610-612</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:21</subfield><subfield code="g">year:2000</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:610-612</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">21</subfield><subfield code="j">2000</subfield><subfield code="e">12</subfield><subfield code="h">610-612</subfield><subfield code="g">3</subfield></datafield></record></collection>
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