Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method

Gespeichert in:

Autor*in:	Yamakawa, Shinya [verfasserIn] Ueno, Hiroaki Taniguchi, Kenji Hamaguchi, Chihiro Miyatsuji, Kazuo Masaki, Kazuo Ravaioli, Umberto

Format:	Artikel

Erschienen:	1996

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 79(1996), 2, Seite 911-916
Übergeordnetes Werk:	volume:79 ; year:1996 ; number:2 ; pages:911-916 ; extent:6

Katalog-ID:	OLC1590771184

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allfields	(DE-627)OLC1590771184 (DE-599)GBVOLC1590771184 DE-627 ger DE-627 rakwb 530 Yamakawa, Shinya verfasserin aut Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method 1996 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ueno, Hiroaki oth Taniguchi, Kenji oth Hamaguchi, Chihiro oth Miyatsuji, Kazuo oth Masaki, Kazuo oth Ravaioli, Umberto oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 79(1996), 2, Seite 911-916 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:79 year:1996 number:2 pages:911-916 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 79 1996 2 911-916 6
spelling	(DE-627)OLC1590771184 (DE-599)GBVOLC1590771184 DE-627 ger DE-627 rakwb 530 Yamakawa, Shinya verfasserin aut Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method 1996 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ueno, Hiroaki oth Taniguchi, Kenji oth Hamaguchi, Chihiro oth Miyatsuji, Kazuo oth Masaki, Kazuo oth Ravaioli, Umberto oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 79(1996), 2, Seite 911-916 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:79 year:1996 number:2 pages:911-916 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 79 1996 2 911-916 6
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allfieldsSound	(DE-627)OLC1590771184 (DE-599)GBVOLC1590771184 DE-627 ger DE-627 rakwb 530 Yamakawa, Shinya verfasserin aut Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method 1996 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ueno, Hiroaki oth Taniguchi, Kenji oth Hamaguchi, Chihiro oth Miyatsuji, Kazuo oth Masaki, Kazuo oth Ravaioli, Umberto oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 79(1996), 2, Seite 911-916 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:79 year:1996 number:2 pages:911-916 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4336 GBV_ILN_4700 AR 79 1996 2 911-916 6
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title_sort	study of interface roughness dependence of electron mobility in si inversion layers using the monte carlo method
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Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method

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