Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface

Gespeichert in:

Autor*in:	Matsuo, Naoto [verfasserIn] Sasaki, Akio

Format:	Artikel

Erschienen:	1996

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 39(1996), 3, Seite 337-342
Übergeordnetes Werk:	volume:39 ; year:1996 ; number:3 ; pages:337-342 ; extent:6

Katalog-ID:	OLC159278545X

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Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface

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