Anisotropies in strain and quantum efficiency of strained GaAs grown on GaAsP
Autor*in: |
Mair, R.A. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
1996 |
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Systematik: |
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Umfang: |
6 |
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Übergeordnetes Werk: |
Enthalten in: Physics letters / A - Amsterdam [u.a.] : Elsevier, 1967, 212(1996), 4, Seite 231-236 |
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Übergeordnetes Werk: |
volume:212 ; year:1996 ; number:4 ; pages:231-236 ; extent:6 |
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