Uniformalization of the Pt-induced-trap concentration profile in silicon by the two-step diffusion method

Gespeichert in:

Autor*in:	Deng, B. [verfasserIn] Shu, C. Kuwano, H.

Format:	Artikel

Erschienen:	1996

Systematik:	UA 7761

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Semiconductor science and technology - Bristol : IOP Publ., 1986, 11(1996), 4, Seite 535-537
Übergeordnetes Werk:	volume:11 ; year:1996 ; number:4 ; pages:535-537 ; extent:3

Katalog-ID:	OLC159483668X

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Uniformalization of the Pt-induced-trap concentration profile in silicon by the two-step diffusion method

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