Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization

Gespeichert in:

Autor*in:	Krishnamoorthy, A. [verfasserIn] Chanda, K. Murarka, S.P. Ramanath, G. Ryan, J.G.

Format:	Artikel

Erschienen:	2001

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 78(2001), 17, Seite 2467-2469
Übergeordnetes Werk:	volume:78 ; year:2001 ; number:17 ; pages:2467-2469 ; extent:3

Katalog-ID:	OLC1602406685

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spelling	SW010419 (DE-627)OLC1602406685 (DE-599)GBVOLC1602406685 DE-627 ger DE-627 rakwb 530 Krishnamoorthy, A. verfasserin aut Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Chanda, K. oth Murarka, S.P. oth Ramanath, G. oth Ryan, J.G. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 78(2001), 17, Seite 2467-2469 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:78 year:2001 number:17 pages:2467-2469 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 78 2001 17 2467-2469 3
allfields_unstemmed	SW010419 (DE-627)OLC1602406685 (DE-599)GBVOLC1602406685 DE-627 ger DE-627 rakwb 530 Krishnamoorthy, A. verfasserin aut Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Chanda, K. oth Murarka, S.P. oth Ramanath, G. oth Ryan, J.G. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 78(2001), 17, Seite 2467-2469 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:78 year:2001 number:17 pages:2467-2469 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 78 2001 17 2467-2469 3
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allfieldsSound	SW010419 (DE-627)OLC1602406685 (DE-599)GBVOLC1602406685 DE-627 ger DE-627 rakwb 530 Krishnamoorthy, A. verfasserin aut Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Chanda, K. oth Murarka, S.P. oth Ramanath, G. oth Ryan, J.G. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 78(2001), 17, Seite 2467-2469 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:78 year:2001 number:17 pages:2467-2469 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 78 2001 17 2467-2469 3
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Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization

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