PAPERS - Optoelectronics, Displays, Imaging - Temperature Dependent Studies of InP-InGaAs Avalanche Photodiodes Based on Time Domain Modeling

Gespeichert in:

Autor*in:	Xiao, Y.G. [verfasserIn] Deen, M.J.

Format:	Artikel

Erschienen:	2001

Umfang:	10

Übergeordnetes Werk:	Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 48(2001), 4, Seite 661-670
Übergeordnetes Werk:	volume:48 ; year:2001 ; number:4 ; pages:661-670 ; extent:10

Katalog-ID:	OLC1602639264

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