Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes

Gespeichert in:

Autor*in:	Manimaran, M. [verfasserIn] Vaya, P.R. Basu, S. Sato, T. Kanayama, T.

Format:	Artikel

Erschienen:	2001

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Scripta materialia - Oxford : Elsevier, 1996, 44(2001), 8-9, Seite 1687-1694
Übergeordnetes Werk:	volume:44 ; year:2001 ; number:8-9 ; pages:1687-1694 ; extent:8

Katalog-ID:	OLC1606545000

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allfields	SW010629 (DE-627)OLC1606545000 (DE-599)GBVOLC1606545000 DE-627 ger DE-627 rakwb 670 Manimaran, M. verfasserin aut Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes 2001 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vaya, P.R. oth Basu, S. oth Sato, T. oth Kanayama, T. oth Enthalten in Scripta materialia Oxford : Elsevier, 1996 44(2001), 8-9, Seite 1687-1694 (DE-627)19139100X (DE-600)1295301-5 (DE-576)051319330 1359-6462 nnns volume:44 year:2001 number:8-9 pages:1687-1694 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 44 2001 8-9 1687-1694 8
spelling	SW010629 (DE-627)OLC1606545000 (DE-599)GBVOLC1606545000 DE-627 ger DE-627 rakwb 670 Manimaran, M. verfasserin aut Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes 2001 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vaya, P.R. oth Basu, S. oth Sato, T. oth Kanayama, T. oth Enthalten in Scripta materialia Oxford : Elsevier, 1996 44(2001), 8-9, Seite 1687-1694 (DE-627)19139100X (DE-600)1295301-5 (DE-576)051319330 1359-6462 nnns volume:44 year:2001 number:8-9 pages:1687-1694 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 44 2001 8-9 1687-1694 8
allfields_unstemmed	SW010629 (DE-627)OLC1606545000 (DE-599)GBVOLC1606545000 DE-627 ger DE-627 rakwb 670 Manimaran, M. verfasserin aut Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes 2001 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vaya, P.R. oth Basu, S. oth Sato, T. oth Kanayama, T. oth Enthalten in Scripta materialia Oxford : Elsevier, 1996 44(2001), 8-9, Seite 1687-1694 (DE-627)19139100X (DE-600)1295301-5 (DE-576)051319330 1359-6462 nnns volume:44 year:2001 number:8-9 pages:1687-1694 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 44 2001 8-9 1687-1694 8
allfieldsGer	SW010629 (DE-627)OLC1606545000 (DE-599)GBVOLC1606545000 DE-627 ger DE-627 rakwb 670 Manimaran, M. verfasserin aut Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes 2001 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vaya, P.R. oth Basu, S. oth Sato, T. oth Kanayama, T. oth Enthalten in Scripta materialia Oxford : Elsevier, 1996 44(2001), 8-9, Seite 1687-1694 (DE-627)19139100X (DE-600)1295301-5 (DE-576)051319330 1359-6462 nnns volume:44 year:2001 number:8-9 pages:1687-1694 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 44 2001 8-9 1687-1694 8
allfieldsSound	SW010629 (DE-627)OLC1606545000 (DE-599)GBVOLC1606545000 DE-627 ger DE-627 rakwb 670 Manimaran, M. verfasserin aut Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes 2001 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vaya, P.R. oth Basu, S. oth Sato, T. oth Kanayama, T. oth Enthalten in Scripta materialia Oxford : Elsevier, 1996 44(2001), 8-9, Seite 1687-1694 (DE-627)19139100X (DE-600)1295301-5 (DE-576)051319330 1359-6462 nnns volume:44 year:2001 number:8-9 pages:1687-1694 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2027 GBV_ILN_4126 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 44 2001 8-9 1687-1694 8
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title_sort	fabrication and characterization of alxga1-xas-gaas based nanofabricated resonant tunneling light emitting diodes
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Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes

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