Semiconductors - In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon

Gespeichert in:

Autor*in:	Tanaka, Shuji [verfasserIn] Ikari, Tetsuo Kitagawa, Hajime

Format:	Artikel

Erschienen:	2001

Systematik:	UA 4210.

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 40(2001), 5, A, Seite 3063-3068
Übergeordnetes Werk:	volume:40 ; year:2001 ; number:5 ; supplement:A ; pages:3063-3068 ; extent:6

Katalog-ID:	OLC1608543145

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allfields	SW010803 (DE-627)OLC1608543145 (DE-599)GBVOLC1608543145 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Tanaka, Shuji verfasserin aut Semiconductors - In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon 2001 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ikari, Tetsuo oth Kitagawa, Hajime oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 40(2001), 5, A, Seite 3063-3068 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:40 year:2001 number:5 supplement:A pages:3063-3068 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2001 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4700 UA 4210. AR 40 2001 5 A 3063-3068 6
spelling	SW010803 (DE-627)OLC1608543145 (DE-599)GBVOLC1608543145 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Tanaka, Shuji verfasserin aut Semiconductors - In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon 2001 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ikari, Tetsuo oth Kitagawa, Hajime oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 40(2001), 5, A, Seite 3063-3068 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:40 year:2001 number:5 supplement:A pages:3063-3068 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2001 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4700 UA 4210. AR 40 2001 5 A 3063-3068 6
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allfieldsSound	SW010803 (DE-627)OLC1608543145 (DE-599)GBVOLC1608543145 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Tanaka, Shuji verfasserin aut Semiconductors - In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon 2001 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ikari, Tetsuo oth Kitagawa, Hajime oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 40(2001), 5, A, Seite 3063-3068 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:40 year:2001 number:5 supplement:A pages:3063-3068 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2001 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_4036 GBV_ILN_4037 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4700 UA 4210. AR 40 2001 5 A 3063-3068 6
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Semiconductors - In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon

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