LETTERS - Compound Semiconductor Devices - Unilateral Power Gain Limitations Due to Dynamic Base Widening Effects

Gespeichert in:

Autor*in:	Willén, B. [verfasserIn] Rohner, M. Jäckel, H.

Format:	Artikel

Erschienen:	2001

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 22(2001), 8, Seite 370-372
Übergeordnetes Werk:	volume:22 ; year:2001 ; number:8 ; pages:370-372 ; extent:3

Katalog-ID:	OLC1608808629

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