Semiconductor Lasers and Amplifiers - Tunable Operation of a Gain-Switched Diode Laser by Nonresonant Self-Injection Seeding
Autor*in: |
Birkin, D.J.L. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
2001 |
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Umfang: |
3 |
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Übergeordnetes Werk: |
Enthalten in: IEEE photonics technology letters - New York, NY : IEEE, 1989, 13(2001), 11, Seite 1158-1160 |
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Übergeordnetes Werk: |
volume:13 ; year:2001 ; number:11 ; pages:1158-1160 ; extent:3 |
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SW011108 (DE-627)OLC1613916205 (DE-599)GBVOLC1613916205 DE-627 ger DE-627 rakwb 620 33.38 bkl 53.54 bkl Birkin, D.J.L. verfasserin aut Semiconductor Lasers and Amplifiers - Tunable Operation of a Gain-Switched Diode Laser by Nonresonant Self-Injection Seeding 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rafailov, E.U. oth Sibbett, W. oth Avrutin, E. oth Enthalten in IEEE photonics technology letters New York, NY : IEEE, 1989 13(2001), 11, Seite 1158-1160 (DE-627)129622567 (DE-600)246805-0 (DE-576)018141765 1041-1135 nnns volume:13 year:2001 number:11 pages:1158-1160 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_147 GBV_ILN_170 GBV_ILN_231 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4700 33.38 AVZ 53.54 AVZ AR 13 2001 11 1158-1160 3 |
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SW011108 (DE-627)OLC1613916205 (DE-599)GBVOLC1613916205 DE-627 ger DE-627 rakwb 620 33.38 bkl 53.54 bkl Birkin, D.J.L. verfasserin aut Semiconductor Lasers and Amplifiers - Tunable Operation of a Gain-Switched Diode Laser by Nonresonant Self-Injection Seeding 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rafailov, E.U. oth Sibbett, W. oth Avrutin, E. oth Enthalten in IEEE photonics technology letters New York, NY : IEEE, 1989 13(2001), 11, Seite 1158-1160 (DE-627)129622567 (DE-600)246805-0 (DE-576)018141765 1041-1135 nnns volume:13 year:2001 number:11 pages:1158-1160 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_147 GBV_ILN_170 GBV_ILN_231 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4700 33.38 AVZ 53.54 AVZ AR 13 2001 11 1158-1160 3 |
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SW011108 (DE-627)OLC1613916205 (DE-599)GBVOLC1613916205 DE-627 ger DE-627 rakwb 620 33.38 bkl 53.54 bkl Birkin, D.J.L. verfasserin aut Semiconductor Lasers and Amplifiers - Tunable Operation of a Gain-Switched Diode Laser by Nonresonant Self-Injection Seeding 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rafailov, E.U. oth Sibbett, W. oth Avrutin, E. oth Enthalten in IEEE photonics technology letters New York, NY : IEEE, 1989 13(2001), 11, Seite 1158-1160 (DE-627)129622567 (DE-600)246805-0 (DE-576)018141765 1041-1135 nnns volume:13 year:2001 number:11 pages:1158-1160 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_147 GBV_ILN_170 GBV_ILN_231 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4700 33.38 AVZ 53.54 AVZ AR 13 2001 11 1158-1160 3 |
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SW011108 (DE-627)OLC1613916205 (DE-599)GBVOLC1613916205 DE-627 ger DE-627 rakwb 620 33.38 bkl 53.54 bkl Birkin, D.J.L. verfasserin aut Semiconductor Lasers and Amplifiers - Tunable Operation of a Gain-Switched Diode Laser by Nonresonant Self-Injection Seeding 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rafailov, E.U. oth Sibbett, W. oth Avrutin, E. oth Enthalten in IEEE photonics technology letters New York, NY : IEEE, 1989 13(2001), 11, Seite 1158-1160 (DE-627)129622567 (DE-600)246805-0 (DE-576)018141765 1041-1135 nnns volume:13 year:2001 number:11 pages:1158-1160 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_147 GBV_ILN_170 GBV_ILN_231 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4700 33.38 AVZ 53.54 AVZ AR 13 2001 11 1158-1160 3 |
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SW011108 (DE-627)OLC1613916205 (DE-599)GBVOLC1613916205 DE-627 ger DE-627 rakwb 620 33.38 bkl 53.54 bkl Birkin, D.J.L. verfasserin aut Semiconductor Lasers and Amplifiers - Tunable Operation of a Gain-Switched Diode Laser by Nonresonant Self-Injection Seeding 2001 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rafailov, E.U. oth Sibbett, W. oth Avrutin, E. oth Enthalten in IEEE photonics technology letters New York, NY : IEEE, 1989 13(2001), 11, Seite 1158-1160 (DE-627)129622567 (DE-600)246805-0 (DE-576)018141765 1041-1135 nnns volume:13 year:2001 number:11 pages:1158-1160 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_147 GBV_ILN_170 GBV_ILN_231 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4700 33.38 AVZ 53.54 AVZ AR 13 2001 11 1158-1160 3 |
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2024-07-03T22:57:50.969Z |
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