Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2) - Two-dimensional electron gas properties - Electrical Characterization at Cubic AIN-GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Gespeichert in:

Autor*in:	Kitamura, T. [verfasserIn] Ishida, Y. Shen, X.Q. Nakanishi, H. Chichibu, S.F. Shimizu, M. Okumura, H.

Format:	Artikel

Erschienen:	2001

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Physica status solidi. B, Basic solid state physics - Berlin : Wiley-VCH, 1971, 228(2001), 2, Seite 599-602
Übergeordnetes Werk:	volume:228 ; year:2001 ; number:2 ; pages:599-602 ; extent:4

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spelling	SW011204 (DE-627)OLC1615262075 (DE-599)GBVOLC1615262075 DE-627 ger DE-627 rakwb 530 33.60 bkl Kitamura, T. verfasserin aut Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2) - Two-dimensional electron gas properties - Electrical Characterization at Cubic AIN-GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy 2001 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishida, Y. oth Shen, X.Q. oth Nakanishi, H. oth Chichibu, S.F. oth Shimizu, M. oth Okumura, H. oth Enthalten in Physica status solidi. B, Basic solid state physics Berlin : Wiley-VCH, 1971 228(2001), 2, Seite 599-602 (DE-627)129503940 (DE-600)208851-4 (DE-576)014907259 0370-1972 nnns volume:228 year:2001 number:2 pages:599-602 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_2045 GBV_ILN_4029 GBV_ILN_4082 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 33.60 AVZ AR 228 2001 2 599-602 4
allfields_unstemmed	SW011204 (DE-627)OLC1615262075 (DE-599)GBVOLC1615262075 DE-627 ger DE-627 rakwb 530 33.60 bkl Kitamura, T. verfasserin aut Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2) - Two-dimensional electron gas properties - Electrical Characterization at Cubic AIN-GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy 2001 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishida, Y. oth Shen, X.Q. oth Nakanishi, H. oth Chichibu, S.F. oth Shimizu, M. oth Okumura, H. oth Enthalten in Physica status solidi. B, Basic solid state physics Berlin : Wiley-VCH, 1971 228(2001), 2, Seite 599-602 (DE-627)129503940 (DE-600)208851-4 (DE-576)014907259 0370-1972 nnns volume:228 year:2001 number:2 pages:599-602 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_2045 GBV_ILN_4029 GBV_ILN_4082 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 33.60 AVZ AR 228 2001 2 599-602 4
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allfieldsSound	SW011204 (DE-627)OLC1615262075 (DE-599)GBVOLC1615262075 DE-627 ger DE-627 rakwb 530 33.60 bkl Kitamura, T. verfasserin aut Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2) - Two-dimensional electron gas properties - Electrical Characterization at Cubic AIN-GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy 2001 4 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ishida, Y. oth Shen, X.Q. oth Nakanishi, H. oth Chichibu, S.F. oth Shimizu, M. oth Okumura, H. oth Enthalten in Physica status solidi. B, Basic solid state physics Berlin : Wiley-VCH, 1971 228(2001), 2, Seite 599-602 (DE-627)129503940 (DE-600)208851-4 (DE-576)014907259 0370-1972 nnns volume:228 year:2001 number:2 pages:599-602 extent:4 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_2045 GBV_ILN_4029 GBV_ILN_4082 GBV_ILN_4277 GBV_ILN_4306 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 33.60 AVZ AR 228 2001 2 599-602 4
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title_sort	papers presented at the fourth international conference on nitride semiconductors (icns-4) denver, colorado, usa, july 16-20, 2001 (part b. 2) - two-dimensional electron gas properties - electrical characterization at cubic ain-gan heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy
title_auth	Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2) - Two-dimensional electron gas properties - Electrical Characterization at Cubic AIN-GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
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title_short	Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2) - Two-dimensional electron gas properties - Electrical Characterization at Cubic AIN-GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
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author2	Ishida, Y. Shen, X.Q. Nakanishi, H. Chichibu, S.F. Shimizu, M. Okumura, H.
author2Str	Ishida, Y. Shen, X.Q. Nakanishi, H. Chichibu, S.F. Shimizu, M. Okumura, H.
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up_date	2024-07-04T01:55:05.612Z
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