Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer

Gespeichert in:

Autor*in:	Matsuo, Naoto [verfasserIn] Takami, Yoshinori Kitagawa, Yasunori

Format:	Artikel

Erschienen:	2002

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 46(2002), 4, Seite 577-580
Übergeordnetes Werk:	volume:46 ; year:2002 ; number:4 ; pages:577-580 ; extent:4

Katalog-ID:	OLC1619814315

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author	Matsuo, Naoto
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title_sort	modeling of direct tunneling for thin sio2 film on n-type si(100) by wkb method considering the quantum effect in the accumulation layer
title_auth	Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer
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title_short	Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer
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Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer

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