Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE

Gespeichert in:

Autor*in:	Ishihara, T. [verfasserIn] Lee, S. Akabori, M. Motohisa, J. Fukui, T.

Format:	Artikel

Erschienen:	2002

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 237(2002), 1, Seite 1476-1480
Übergeordnetes Werk:	volume:237 ; year:2002 ; supplement:1 ; pages:1476-1480 ; extent:5

Katalog-ID:	OLC162655398X

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title_sort	dependence on in content of inxga1-xas quantum dots grown along gaas multiatomic steps by movpe
title_auth	Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE
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Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE

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