Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation

Gespeichert in:

Autor*in:	Ueno, H. [verfasserIn] Kitamaru, D. Morikawa, K. Tanaka, M. Miura-Mattausch, M. Mattausch, H.J. Kumashiro, S. Yamaguchi, T. Yamashita, K. Nakayama, N.

Format:	Artikel

Erschienen:	2002

Umfang:	7

Übergeordnetes Werk:	Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 49(2002), 10, Seite 1783-1789
Übergeordnetes Werk:	volume:49 ; year:2002 ; number:10 ; pages:1783-1789 ; extent:7

Katalog-ID:	OLC1631748750

Internformat


LEADER	01000caa a22002652 4500
001	OLC1631748750
003	DE-627
005	20210702131926.0
007	tu
008	021016s2002 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a SW021016
035			\|a (DE-627)OLC1631748750
035			\|a (DE-599)GBVOLC1631748750
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
100	1		\|a Ueno, H. \|e verfasserin \|4 aut
245	1	0	\|a Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation
264		1	\|c 2002
300			\|a 7
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Kitamaru, D. \|4 oth
700	1		\|a Morikawa, K. \|4 oth
700	1		\|a Tanaka, M. \|4 oth
700	1		\|a Miura-Mattausch, M. \|4 oth
700	1		\|a Mattausch, H.J. \|4 oth
700	1		\|a Kumashiro, S. \|4 oth
700	1		\|a Yamaguchi, T. \|4 oth
700	1		\|a Yamashita, K. \|4 oth
700	1		\|a Nakayama, N. \|4 oth
773	0	8	\|i Enthalten in \|t IEEE transactions on electron devices \|d New York, NY : IEEE, 1963 \|g 49(2002), 10, Seite 1783-1789 \|w (DE-627)129602922 \|w (DE-600)241634-7 \|w (DE-576)015096734 \|x 0018-9383 \|7 nnns
773	1	8	\|g volume:49 \|g year:2002 \|g number:10 \|g pages:1783-1789 \|g extent:7
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a SSG-OLC-MAT
912			\|a GBV_ILN_20
912			\|a GBV_ILN_21
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_32
912			\|a GBV_ILN_70
912			\|a GBV_ILN_100
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2002
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2016
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4309
912			\|a GBV_ILN_4310
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4317
912			\|a GBV_ILN_4318
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 49 \|j 2002 \|e 10 \|h 1783-1789 \|g 7

Indexfelder

author_variant	h u hu
matchkey_str	article:00189383:2002----::iiodvcsmuiyrflbsdhehlvlaeoeopceipatd
hierarchy_sort_str	2002
publishDate	2002
allfields	SW021016 (DE-627)OLC1631748750 (DE-599)GBVOLC1631748750 DE-627 ger DE-627 rakwb 620 Ueno, H. verfasserin aut Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation 2002 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kitamaru, D. oth Morikawa, K. oth Tanaka, M. oth Miura-Mattausch, M. oth Mattausch, H.J. oth Kumashiro, S. oth Yamaguchi, T. oth Yamashita, K. oth Nakayama, N. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 49(2002), 10, Seite 1783-1789 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:49 year:2002 number:10 pages:1783-1789 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 49 2002 10 1783-1789 7
spelling	SW021016 (DE-627)OLC1631748750 (DE-599)GBVOLC1631748750 DE-627 ger DE-627 rakwb 620 Ueno, H. verfasserin aut Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation 2002 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kitamaru, D. oth Morikawa, K. oth Tanaka, M. oth Miura-Mattausch, M. oth Mattausch, H.J. oth Kumashiro, S. oth Yamaguchi, T. oth Yamashita, K. oth Nakayama, N. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 49(2002), 10, Seite 1783-1789 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:49 year:2002 number:10 pages:1783-1789 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 49 2002 10 1783-1789 7
allfields_unstemmed	SW021016 (DE-627)OLC1631748750 (DE-599)GBVOLC1631748750 DE-627 ger DE-627 rakwb 620 Ueno, H. verfasserin aut Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation 2002 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kitamaru, D. oth Morikawa, K. oth Tanaka, M. oth Miura-Mattausch, M. oth Mattausch, H.J. oth Kumashiro, S. oth Yamaguchi, T. oth Yamashita, K. oth Nakayama, N. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 49(2002), 10, Seite 1783-1789 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:49 year:2002 number:10 pages:1783-1789 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 49 2002 10 1783-1789 7
allfieldsGer	SW021016 (DE-627)OLC1631748750 (DE-599)GBVOLC1631748750 DE-627 ger DE-627 rakwb 620 Ueno, H. verfasserin aut Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation 2002 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kitamaru, D. oth Morikawa, K. oth Tanaka, M. oth Miura-Mattausch, M. oth Mattausch, H.J. oth Kumashiro, S. oth Yamaguchi, T. oth Yamashita, K. oth Nakayama, N. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 49(2002), 10, Seite 1783-1789 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:49 year:2002 number:10 pages:1783-1789 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 49 2002 10 1783-1789 7
allfieldsSound	SW021016 (DE-627)OLC1631748750 (DE-599)GBVOLC1631748750 DE-627 ger DE-627 rakwb 620 Ueno, H. verfasserin aut Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation 2002 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kitamaru, D. oth Morikawa, K. oth Tanaka, M. oth Miura-Mattausch, M. oth Mattausch, H.J. oth Kumashiro, S. oth Yamaguchi, T. oth Yamashita, K. oth Nakayama, N. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 49(2002), 10, Seite 1783-1789 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:49 year:2002 number:10 pages:1783-1789 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700 AR 49 2002 10 1783-1789 7
source	Enthalten in IEEE transactions on electron devices 49(2002), 10, Seite 1783-1789 volume:49 year:2002 number:10 pages:1783-1789 extent:7
sourceStr	Enthalten in IEEE transactions on electron devices 49(2002), 10, Seite 1783-1789 volume:49 year:2002 number:10 pages:1783-1789 extent:7
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE transactions on electron devices
authorswithroles_txt_mv	Ueno, H. @@aut@@ Kitamaru, D. @@oth@@ Morikawa, K. @@oth@@ Tanaka, M. @@oth@@ Miura-Mattausch, M. @@oth@@ Mattausch, H.J. @@oth@@ Kumashiro, S. @@oth@@ Yamaguchi, T. @@oth@@ Yamashita, K. @@oth@@ Nakayama, N. @@oth@@
publishDateDaySort_date	2002-01-01T00:00:00Z
hierarchy_top_id	129602922
dewey-sort	3620
id	OLC1631748750
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1631748750</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210702131926.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">021016s2002 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW021016</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1631748750</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1631748750</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ueno, H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kitamaru, D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Morikawa, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tanaka, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Miura-Mattausch, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mattausch, H.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kumashiro, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yamaguchi, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yamashita, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nakayama, N.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on electron devices</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">49(2002), 10, Seite 1783-1789</subfield><subfield code="w">(DE-627)129602922</subfield><subfield code="w">(DE-600)241634-7</subfield><subfield code="w">(DE-576)015096734</subfield><subfield code="x">0018-9383</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:49</subfield><subfield code="g">year:2002</subfield><subfield code="g">number:10</subfield><subfield code="g">pages:1783-1789</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">49</subfield><subfield code="j">2002</subfield><subfield code="e">10</subfield><subfield code="h">1783-1789</subfield><subfield code="g">7</subfield></datafield></record></collection>
author	Ueno, H.
spellingShingle	Ueno, H. ddc 620 Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation
authorStr	Ueno, H.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129602922
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0018-9383
topic_title	620 Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation
topic	ddc 620
topic_unstemmed	ddc 620
topic_browse	ddc 620
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	d k dk k m km m t mt m m m mmm h m hm s k sk t y ty k y ky n n nn
hierarchy_parent_title	IEEE transactions on electron devices
hierarchy_parent_id	129602922
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE transactions on electron devices
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129602922 (DE-600)241634-7 (DE-576)015096734
title	Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation
ctrlnum	(DE-627)OLC1631748750 (DE-599)GBVOLC1631748750
title_full	Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation
author_sort	Ueno, H.
journal	IEEE transactions on electron devices
journalStr	IEEE transactions on electron devices
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2002
contenttype_str_mv	txt
container_start_page	1783
author_browse	Ueno, H.
container_volume	49
physical	7
class	620
format_se	Aufsätze
author-letter	Ueno, H.
dewey-full	620
title_sort	silicon devices - impurity-profile-based threshold-voltage model of pocket-implanted mosfets for circuit simulation
title_auth	Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4036 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4700
container_issue	10
title_short	Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation
remote_bool	false
author2	Kitamaru, D. Morikawa, K. Tanaka, M. Miura-Mattausch, M. Mattausch, H.J. Kumashiro, S. Yamaguchi, T. Yamashita, K. Nakayama, N.
author2Str	Kitamaru, D. Morikawa, K. Tanaka, M. Miura-Mattausch, M. Mattausch, H.J. Kumashiro, S. Yamaguchi, T. Yamashita, K. Nakayama, N.
ppnlink	129602922
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth oth oth oth oth
up_date	2024-07-03T14:23:57.683Z
_version_	1803568165877186561
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1631748750</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210702131926.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">021016s2002 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">SW021016</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1631748750</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1631748750</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ueno, H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kitamaru, D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Morikawa, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tanaka, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Miura-Mattausch, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mattausch, H.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kumashiro, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yamaguchi, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yamashita, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nakayama, N.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on electron devices</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">49(2002), 10, Seite 1783-1789</subfield><subfield code="w">(DE-627)129602922</subfield><subfield code="w">(DE-600)241634-7</subfield><subfield code="w">(DE-576)015096734</subfield><subfield code="x">0018-9383</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:49</subfield><subfield code="g">year:2002</subfield><subfield code="g">number:10</subfield><subfield code="g">pages:1783-1789</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4309</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4317</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">49</subfield><subfield code="j">2002</subfield><subfield code="e">10</subfield><subfield code="h">1783-1789</subfield><subfield code="g">7</subfield></datafield></record></collection>
score	7.399288

Nicht das Richtige dabei?

Schreiben Sie uns!

Silicon Devices - Impurity-Profile-Based Threshold-Voltage Model of Pocket-Implanted MOSFETs for Circuit Simulation

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?