Explanation of the Hall coefficient and magnetoresistance of single crystals of bismuth doped with gallium and indium

Gespeichert in:

Autor*in:	Dey, K.K. [verfasserIn] Banerjee, D. Bhattacharya, R.

Format:	Artikel

Erschienen:	2003

Umfang:	9

Übergeordnetes Werk:	Enthalten in: Physica. B, Condensed matter - Amsterdam : Elsevier, 1988, 324(2003), 1, Seite 34-42
Übergeordnetes Werk:	volume:324 ; year:2003 ; number:1 ; pages:34-42 ; extent:9

Katalog-ID:	OLC1636263135

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Explanation of the Hall coefficient and magnetoresistance of single crystals of bismuth doped with gallium and indium

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