Micromagnetic simulation for tunnel junctions with synthetic antiferromagnetic pinned layers annealed at different external fields

Gespeichert in:

Autor*in:	Liu, Yaowen [verfasserIn] Zhang, Zongzhi Zhang, Zhengang Freitas, P.P. Martins, J.L.

Format:	Artikel

Erschienen:	2002

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 91(2002), 10, 3, Seite 8296-8298
Übergeordnetes Werk:	volume:91 ; year:2002 ; number:10 ; supplement:3 ; pages:8296-8298 ; extent:3

Katalog-ID:	OLC1636551130

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allfields	SW030117 (DE-627)OLC1636551130 (DE-599)GBVOLC1636551130 DE-627 ger DE-627 rakwb 530 Liu, Yaowen verfasserin aut Micromagnetic simulation for tunnel junctions with synthetic antiferromagnetic pinned layers annealed at different external fields 2002 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhang, Zongzhi oth Zhang, Zhengang oth Freitas, P.P. oth Martins, J.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 91(2002), 10, 3, Seite 8296-8298 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:91 year:2002 number:10 supplement:3 pages:8296-8298 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 91 2002 10 3 8296-8298 3
spelling	SW030117 (DE-627)OLC1636551130 (DE-599)GBVOLC1636551130 DE-627 ger DE-627 rakwb 530 Liu, Yaowen verfasserin aut Micromagnetic simulation for tunnel junctions with synthetic antiferromagnetic pinned layers annealed at different external fields 2002 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhang, Zongzhi oth Zhang, Zhengang oth Freitas, P.P. oth Martins, J.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 91(2002), 10, 3, Seite 8296-8298 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:91 year:2002 number:10 supplement:3 pages:8296-8298 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 91 2002 10 3 8296-8298 3
allfields_unstemmed	SW030117 (DE-627)OLC1636551130 (DE-599)GBVOLC1636551130 DE-627 ger DE-627 rakwb 530 Liu, Yaowen verfasserin aut Micromagnetic simulation for tunnel junctions with synthetic antiferromagnetic pinned layers annealed at different external fields 2002 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhang, Zongzhi oth Zhang, Zhengang oth Freitas, P.P. oth Martins, J.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 91(2002), 10, 3, Seite 8296-8298 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:91 year:2002 number:10 supplement:3 pages:8296-8298 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 91 2002 10 3 8296-8298 3
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allfieldsSound	SW030117 (DE-627)OLC1636551130 (DE-599)GBVOLC1636551130 DE-627 ger DE-627 rakwb 530 Liu, Yaowen verfasserin aut Micromagnetic simulation for tunnel junctions with synthetic antiferromagnetic pinned layers annealed at different external fields 2002 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhang, Zongzhi oth Zhang, Zhengang oth Freitas, P.P. oth Martins, J.L. oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 91(2002), 10, 3, Seite 8296-8298 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:91 year:2002 number:10 supplement:3 pages:8296-8298 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4126 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 91 2002 10 3 8296-8298 3
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Micromagnetic simulation for tunnel junctions with synthetic antiferromagnetic pinned layers annealed at different external fields

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