Reduction of stress at the initial stages of GaN growth on Si(111)

Gespeichert in:

Autor*in:	Dadgar, A. [verfasserIn] Poschenrieder, M. Reiher, A. Bläsing, J. Christen, J. Krtschil, A. Finger, T. Hempel, T. Diez, A.

Format:	Artikel

Erschienen:	2003

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 82(2003), 1, Seite 28-30
Übergeordnetes Werk:	volume:82 ; year:2003 ; number:1 ; pages:28-30 ; extent:3

Katalog-ID:	OLC1638678642

Internformat


LEADER	01000caa a22002652 4500
001	OLC1638678642
003	DE-627
005	20210702181228.0
007	tu
008	030406s2003 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw030224
035			\|a (DE-627)OLC1638678642
035			\|a (DE-599)GBVOLC1638678642
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 530
100	1		\|a Dadgar, A. \|e verfasserin \|4 aut
245	1	0	\|a Reduction of stress at the initial stages of GaN growth on Si(111)
264		1	\|c 2003
300			\|a 3
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Poschenrieder, M. \|4 oth
700	1		\|a Reiher, A. \|4 oth
700	1		\|a Bläsing, J. \|4 oth
700	1		\|a Christen, J. \|4 oth
700	1		\|a Krtschil, A. \|4 oth
700	1		\|a Finger, T. \|4 oth
700	1		\|a Hempel, T. \|4 oth
700	1		\|a Diez, A. \|4 oth
773	0	8	\|i Enthalten in \|t Applied physics letters \|d Melville, NY : AIP, 1962 \|g 82(2003), 1, Seite 28-30 \|w (DE-627)12951568X \|w (DE-600)211245-0 \|w (DE-576)014926210 \|x 0003-6951 \|7 nnns
773	1	8	\|g volume:82 \|g year:2003 \|g number:1 \|g pages:28-30 \|g extent:3
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-PHY
912			\|a GBV_ILN_11
912			\|a GBV_ILN_21
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_55
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_70
912			\|a GBV_ILN_130
912			\|a GBV_ILN_150
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2192
912			\|a GBV_ILN_2279
912			\|a GBV_ILN_2409
912			\|a GBV_ILN_4036
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4310
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4315
912			\|a GBV_ILN_4319
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 82 \|j 2003 \|e 1 \|h 28-30 \|g 3

Indexfelder

author_variant	a d ad
matchkey_str	article:00036951:2003----::eutoosrsatentasaeog
hierarchy_sort_str	2003
publishDate	2003
allfields	sw030224 (DE-627)OLC1638678642 (DE-599)GBVOLC1638678642 DE-627 ger DE-627 rakwb 530 Dadgar, A. verfasserin aut Reduction of stress at the initial stages of GaN growth on Si(111) 2003 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Poschenrieder, M. oth Reiher, A. oth Bläsing, J. oth Christen, J. oth Krtschil, A. oth Finger, T. oth Hempel, T. oth Diez, A. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 82(2003), 1, Seite 28-30 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:82 year:2003 number:1 pages:28-30 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 82 2003 1 28-30 3
spelling	sw030224 (DE-627)OLC1638678642 (DE-599)GBVOLC1638678642 DE-627 ger DE-627 rakwb 530 Dadgar, A. verfasserin aut Reduction of stress at the initial stages of GaN growth on Si(111) 2003 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Poschenrieder, M. oth Reiher, A. oth Bläsing, J. oth Christen, J. oth Krtschil, A. oth Finger, T. oth Hempel, T. oth Diez, A. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 82(2003), 1, Seite 28-30 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:82 year:2003 number:1 pages:28-30 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 82 2003 1 28-30 3
allfields_unstemmed	sw030224 (DE-627)OLC1638678642 (DE-599)GBVOLC1638678642 DE-627 ger DE-627 rakwb 530 Dadgar, A. verfasserin aut Reduction of stress at the initial stages of GaN growth on Si(111) 2003 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Poschenrieder, M. oth Reiher, A. oth Bläsing, J. oth Christen, J. oth Krtschil, A. oth Finger, T. oth Hempel, T. oth Diez, A. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 82(2003), 1, Seite 28-30 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:82 year:2003 number:1 pages:28-30 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 82 2003 1 28-30 3
allfieldsGer	sw030224 (DE-627)OLC1638678642 (DE-599)GBVOLC1638678642 DE-627 ger DE-627 rakwb 530 Dadgar, A. verfasserin aut Reduction of stress at the initial stages of GaN growth on Si(111) 2003 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Poschenrieder, M. oth Reiher, A. oth Bläsing, J. oth Christen, J. oth Krtschil, A. oth Finger, T. oth Hempel, T. oth Diez, A. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 82(2003), 1, Seite 28-30 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:82 year:2003 number:1 pages:28-30 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 82 2003 1 28-30 3
allfieldsSound	sw030224 (DE-627)OLC1638678642 (DE-599)GBVOLC1638678642 DE-627 ger DE-627 rakwb 530 Dadgar, A. verfasserin aut Reduction of stress at the initial stages of GaN growth on Si(111) 2003 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Poschenrieder, M. oth Reiher, A. oth Bläsing, J. oth Christen, J. oth Krtschil, A. oth Finger, T. oth Hempel, T. oth Diez, A. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 82(2003), 1, Seite 28-30 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:82 year:2003 number:1 pages:28-30 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 82 2003 1 28-30 3
source	Enthalten in Applied physics letters 82(2003), 1, Seite 28-30 volume:82 year:2003 number:1 pages:28-30 extent:3
sourceStr	Enthalten in Applied physics letters 82(2003), 1, Seite 28-30 volume:82 year:2003 number:1 pages:28-30 extent:3
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	530
isfreeaccess_bool	false
container_title	Applied physics letters
authorswithroles_txt_mv	Dadgar, A. @@aut@@ Poschenrieder, M. @@oth@@ Reiher, A. @@oth@@ Bläsing, J. @@oth@@ Christen, J. @@oth@@ Krtschil, A. @@oth@@ Finger, T. @@oth@@ Hempel, T. @@oth@@ Diez, A. @@oth@@
publishDateDaySort_date	2003-01-01T00:00:00Z
hierarchy_top_id	12951568X
dewey-sort	3530
id	OLC1638678642
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1638678642</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210702181228.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">030406s2003 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw030224</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1638678642</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1638678642</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dadgar, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Reduction of stress at the initial stages of GaN growth on Si(111)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2003</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Poschenrieder, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Reiher, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bläsing, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Christen, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Krtschil, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Finger, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hempel, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Diez, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics letters</subfield><subfield code="d">Melville, NY : AIP, 1962</subfield><subfield code="g">82(2003), 1, Seite 28-30</subfield><subfield code="w">(DE-627)12951568X</subfield><subfield code="w">(DE-600)211245-0</subfield><subfield code="w">(DE-576)014926210</subfield><subfield code="x">0003-6951</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:82</subfield><subfield code="g">year:2003</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:28-30</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_55</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">82</subfield><subfield code="j">2003</subfield><subfield code="e">1</subfield><subfield code="h">28-30</subfield><subfield code="g">3</subfield></datafield></record></collection>
author	Dadgar, A.
spellingShingle	Dadgar, A. ddc 530 Reduction of stress at the initial stages of GaN growth on Si(111)
authorStr	Dadgar, A.
ppnlink_with_tag_str_mv	@@773@@(DE-627)12951568X
format	Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0003-6951
topic_title	530 Reduction of stress at the initial stages of GaN growth on Si(111)
topic	ddc 530
topic_unstemmed	ddc 530
topic_browse	ddc 530
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	m p mp a r ar j b jb j c jc a k ak t f tf t h th a d ad
hierarchy_parent_title	Applied physics letters
hierarchy_parent_id	12951568X
dewey-tens	530 - Physics
hierarchy_top_title	Applied physics letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)12951568X (DE-600)211245-0 (DE-576)014926210
title	Reduction of stress at the initial stages of GaN growth on Si(111)
ctrlnum	(DE-627)OLC1638678642 (DE-599)GBVOLC1638678642
title_full	Reduction of stress at the initial stages of GaN growth on Si(111)
author_sort	Dadgar, A.
journal	Applied physics letters
journalStr	Applied physics letters
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2003
contenttype_str_mv	txt
container_start_page	28
author_browse	Dadgar, A.
container_volume	82
physical	3
class	530
format_se	Aufsätze
author-letter	Dadgar, A.
dewey-full	530
title_sort	reduction of stress at the initial stages of gan growth on si(111)
title_auth	Reduction of stress at the initial stages of GaN growth on Si(111)
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700
container_issue	1
title_short	Reduction of stress at the initial stages of GaN growth on Si(111)
remote_bool	false
author2	Poschenrieder, M. Reiher, A. Bläsing, J. Christen, J. Krtschil, A. Finger, T. Hempel, T. Diez, A.
author2Str	Poschenrieder, M. Reiher, A. Bläsing, J. Christen, J. Krtschil, A. Finger, T. Hempel, T. Diez, A.
ppnlink	12951568X
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth oth oth oth
up_date	2024-07-03T18:09:06.987Z
_version_	1803582331410186240
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1638678642</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210702181228.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">030406s2003 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw030224</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1638678642</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1638678642</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dadgar, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Reduction of stress at the initial stages of GaN growth on Si(111)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2003</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Poschenrieder, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Reiher, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bläsing, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Christen, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Krtschil, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Finger, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hempel, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Diez, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics letters</subfield><subfield code="d">Melville, NY : AIP, 1962</subfield><subfield code="g">82(2003), 1, Seite 28-30</subfield><subfield code="w">(DE-627)12951568X</subfield><subfield code="w">(DE-600)211245-0</subfield><subfield code="w">(DE-576)014926210</subfield><subfield code="x">0003-6951</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:82</subfield><subfield code="g">year:2003</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:28-30</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_55</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2192</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2409</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4036</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4310</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4315</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">82</subfield><subfield code="j">2003</subfield><subfield code="e">1</subfield><subfield code="h">28-30</subfield><subfield code="g">3</subfield></datafield></record></collection>
score	7.4020205

Nicht das Richtige dabei?

Schreiben Sie uns!

Reduction of stress at the initial stages of GaN growth on Si(111)

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?