RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages)
Autor*in: |
Sun, Yue Jun [verfasserIn] |
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Artikel |
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Erschienen: |
2003 |
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Systematik: |
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Übergeordnetes Werk: |
Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 67(2003), 4, Seite 41306R |
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volume:67 ; year:2003 ; number:4 ; pages:41306R |
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sw030325 (DE-627)OLC164015664X (DE-599)GBVOLC164015664X DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Sun, Yue Jun verfasserin aut RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Brandt, Oliver oth Cronenberg, Sven oth Dhar, Subhabrata oth Grahn, Holger T. oth Ploog, Klaus H. oth Waltereit, Patrick oth Speck, James S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 67(2003), 4, Seite 41306R (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:67 year:2003 number:4 pages:41306R GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 67 2003 4 41306R |
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sw030325 (DE-627)OLC164015664X (DE-599)GBVOLC164015664X DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Sun, Yue Jun verfasserin aut RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Brandt, Oliver oth Cronenberg, Sven oth Dhar, Subhabrata oth Grahn, Holger T. oth Ploog, Klaus H. oth Waltereit, Patrick oth Speck, James S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 67(2003), 4, Seite 41306R (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:67 year:2003 number:4 pages:41306R GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 67 2003 4 41306R |
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sw030325 (DE-627)OLC164015664X (DE-599)GBVOLC164015664X DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Sun, Yue Jun verfasserin aut RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Brandt, Oliver oth Cronenberg, Sven oth Dhar, Subhabrata oth Grahn, Holger T. oth Ploog, Klaus H. oth Waltereit, Patrick oth Speck, James S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 67(2003), 4, Seite 41306R (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:67 year:2003 number:4 pages:41306R GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 67 2003 4 41306R |
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sw030325 (DE-627)OLC164015664X (DE-599)GBVOLC164015664X DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Sun, Yue Jun verfasserin aut RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Brandt, Oliver oth Cronenberg, Sven oth Dhar, Subhabrata oth Grahn, Holger T. oth Ploog, Klaus H. oth Waltereit, Patrick oth Speck, James S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 67(2003), 4, Seite 41306R (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:67 year:2003 number:4 pages:41306R GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 67 2003 4 41306R |
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sw030325 (DE-627)OLC164015664X (DE-599)GBVOLC164015664X DE-627 ger DE-627 rakwb 530 UA 6500. AVZ rvk Sun, Yue Jun verfasserin aut RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Brandt, Oliver oth Cronenberg, Sven oth Dhar, Subhabrata oth Grahn, Holger T. oth Ploog, Klaus H. oth Waltereit, Patrick oth Speck, James S. oth Enthalten in Physical review / B Ridge, NY : APS, 1970 67(2003), 4, Seite 41306R (DE-627)129508640 (DE-600)209770-9 (DE-576)014914921 2469-9950 nnns volume:67 year:2003 number:4 pages:41306R GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_1 GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2185 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 6500. AR 67 2003 4 41306R |
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RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) |
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RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) |
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rapid communications - semiconductors ii: surfaces, interfaces, microstructures, and related topics - nonpolar inxga1-xn-gan(1100) multiple quantum wells grown on g-lialo2(100) by plasma-assisted molecular-beam epitaxy (4 pages) |
title_auth |
RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) |
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RAPID COMMUNICATIONS - Semiconductors II: Surfaces, interfaces, microstructures, and related topics - Nonpolar InxGa1-xN-GaN(1100) multiple quantum wells grown on g-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (4 pages) |
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