Semiconductor Devices, Materials, and Processing - Diffusion Properties of Ion-Implanted Vanadium in PECVD-SiO2 and PECVD-SiNx

Gespeichert in:

Autor*in:	Isenberg, J. [verfasserIn] Reber, S. Warta, W.

Format:	Artikel

Erschienen:	2003

Systematik:	VA 4000

Übergeordnetes Werk:	Enthalten in: Journal of the Electrochemical Society - Pennington, NJ : Electrochemical Society, 1948, 150(2003), 7, Seite G365
Übergeordnetes Werk:	volume:150 ; year:2003 ; number:7 ; pages:G365

Katalog-ID:	OLC1646688775

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