LETTERS - Silicon Devices - Fully Silicided NiSi Gate on La2O3 MOSFETs

Gespeichert in:

Autor*in:	Lin, C.Y. [verfasserIn] Ma, M.W. Chin, A. Yeo, Y.C. Zhu, C. Li, M.F. Kwong, D.-L.

Format:	Artikel

Erschienen:	2003

Umfang:	3

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 24(2003), 5, Seite 348-350
Übergeordnetes Werk:	volume:24 ; year:2003 ; number:5 ; pages:348-350 ; extent:3

Katalog-ID:	OLC1646783212

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