Application of advanced metal-oxide-semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit

Gespeichert in:

Autor*in:	Matsuo, Naoto [verfasserIn] Kihara, Hiroyuki Takami, Yoshinori

Format:	Artikel

Erschienen:	2003

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 47(2003), 11, Seite 1969-1972
Übergeordnetes Werk:	volume:47 ; year:2003 ; number:11 ; pages:1969-1972 ; extent:4

Katalog-ID:	OLC1648061540

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