Deep traps in unpassivated and Sc2O3-passivated AlGaN-GaN high electron mobility transistors

Gespeichert in:

Autor*in:	Polyakov, A.Y. [verfasserIn] Smirnov, N.B. Govorkov, A.V. Danilin, V.N. Zhukova, T.A. Luo, B. Ren, F. Gila, B.P. Onstine, A.H.

Format:	Artikel

Erschienen:	2003

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 83(2003), 13, Seite 2608-2610
Übergeordnetes Werk:	volume:83 ; year:2003 ; number:13 ; pages:2608-2610 ; extent:3

Katalog-ID:	OLC165017117X

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spelling	sw030925 (DE-627)OLC165017117X (DE-599)GBVOLC165017117X DE-627 ger DE-627 rakwb 530 Polyakov, A.Y. verfasserin aut Deep traps in unpassivated and Sc2O3-passivated AlGaN-GaN high electron mobility transistors 2003 3 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Smirnov, N.B. oth Govorkov, A.V. oth Danilin, V.N. oth Zhukova, T.A. oth Luo, B. oth Ren, F. oth Gila, B.P. oth Onstine, A.H. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 83(2003), 13, Seite 2608-2610 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:83 year:2003 number:13 pages:2608-2610 extent:3 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4036 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 83 2003 13 2608-2610 3
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Deep traps in unpassivated and Sc2O3-passivated AlGaN-GaN high electron mobility transistors

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