Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth

Gespeichert in:

Autor*in:	Loo, Roger [verfasserIn] Collaert, Nadine Verheyen, Peter Caymax, Matty Delhougne, Romain Meyer, Kristin De

Format:	Artikel

Erschienen:	2004

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Applied surface science - Amsterdam [u.a.] : Elsevier, 1985, 224(2004), 1, Seite 292-296
Übergeordnetes Werk:	volume:224 ; year:2004 ; number:1 ; pages:292-296 ; extent:5

Katalog-ID:	OLC165841733X

Internformat


LEADER	01000caa a22002652 4500
001	OLC165841733X
003	DE-627
005	20230707121636.0
007	tu
008	040220s2004 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw040219
035			\|a (DE-627)OLC165841733X
035			\|a (DE-599)GBVOLC165841733X
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 670 \|a 530 \|a 660
100	1		\|a Loo, Roger \|e verfasserin \|4 aut
245	1	0	\|a Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
264		1	\|c 2004
300			\|a 5
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Collaert, Nadine \|4 oth
700	1		\|a Verheyen, Peter \|4 oth
700	1		\|a Caymax, Matty \|4 oth
700	1		\|a Delhougne, Romain \|4 oth
700	1		\|a Meyer, Kristin De \|4 oth
773	0	8	\|i Enthalten in \|t Applied surface science \|d Amsterdam [u.a.] : Elsevier, 1985 \|g 224(2004), 1, Seite 292-296 \|w (DE-627)129187496 \|w (DE-600)52886-9 \|w (DE-576)014456311 \|x 0169-4332 \|7 nnns
773	1	8	\|g volume:224 \|g year:2004 \|g number:1 \|g pages:292-296 \|g extent:5
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a SSG-OLC-PHY
912			\|a SSG-OLC-CHE
912			\|a SSG-OLC-PHA
912			\|a SSG-OLC-DE-84
912			\|a GBV_ILN_22
912			\|a GBV_ILN_24
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_4266
951			\|a AR
952			\|d 224 \|j 2004 \|e 1 \|h 292-296 \|g 5

Indexfelder

author_variant	r l rl
matchkey_str	article:01694332:2004----::arctoo5nhgpromnetandiemsesihee
hierarchy_sort_str	2004
publishDate	2004
allfields	sw040219 (DE-627)OLC165841733X (DE-599)GBVOLC165841733X DE-627 ger DE-627 rakwb 670 530 660 Loo, Roger verfasserin aut Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth 2004 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Collaert, Nadine oth Verheyen, Peter oth Caymax, Matty oth Delhougne, Romain oth Meyer, Kristin De oth Enthalten in Applied surface science Amsterdam [u.a.] : Elsevier, 1985 224(2004), 1, Seite 292-296 (DE-627)129187496 (DE-600)52886-9 (DE-576)014456311 0169-4332 nnns volume:224 year:2004 number:1 pages:292-296 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_24 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_4266 AR 224 2004 1 292-296 5
spelling	sw040219 (DE-627)OLC165841733X (DE-599)GBVOLC165841733X DE-627 ger DE-627 rakwb 670 530 660 Loo, Roger verfasserin aut Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth 2004 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Collaert, Nadine oth Verheyen, Peter oth Caymax, Matty oth Delhougne, Romain oth Meyer, Kristin De oth Enthalten in Applied surface science Amsterdam [u.a.] : Elsevier, 1985 224(2004), 1, Seite 292-296 (DE-627)129187496 (DE-600)52886-9 (DE-576)014456311 0169-4332 nnns volume:224 year:2004 number:1 pages:292-296 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_24 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_4266 AR 224 2004 1 292-296 5
allfields_unstemmed	sw040219 (DE-627)OLC165841733X (DE-599)GBVOLC165841733X DE-627 ger DE-627 rakwb 670 530 660 Loo, Roger verfasserin aut Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth 2004 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Collaert, Nadine oth Verheyen, Peter oth Caymax, Matty oth Delhougne, Romain oth Meyer, Kristin De oth Enthalten in Applied surface science Amsterdam [u.a.] : Elsevier, 1985 224(2004), 1, Seite 292-296 (DE-627)129187496 (DE-600)52886-9 (DE-576)014456311 0169-4332 nnns volume:224 year:2004 number:1 pages:292-296 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_24 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_4266 AR 224 2004 1 292-296 5
allfieldsGer	sw040219 (DE-627)OLC165841733X (DE-599)GBVOLC165841733X DE-627 ger DE-627 rakwb 670 530 660 Loo, Roger verfasserin aut Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth 2004 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Collaert, Nadine oth Verheyen, Peter oth Caymax, Matty oth Delhougne, Romain oth Meyer, Kristin De oth Enthalten in Applied surface science Amsterdam [u.a.] : Elsevier, 1985 224(2004), 1, Seite 292-296 (DE-627)129187496 (DE-600)52886-9 (DE-576)014456311 0169-4332 nnns volume:224 year:2004 number:1 pages:292-296 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_24 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_4266 AR 224 2004 1 292-296 5
allfieldsSound	sw040219 (DE-627)OLC165841733X (DE-599)GBVOLC165841733X DE-627 ger DE-627 rakwb 670 530 660 Loo, Roger verfasserin aut Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth 2004 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Collaert, Nadine oth Verheyen, Peter oth Caymax, Matty oth Delhougne, Romain oth Meyer, Kristin De oth Enthalten in Applied surface science Amsterdam [u.a.] : Elsevier, 1985 224(2004), 1, Seite 292-296 (DE-627)129187496 (DE-600)52886-9 (DE-576)014456311 0169-4332 nnns volume:224 year:2004 number:1 pages:292-296 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_24 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_4266 AR 224 2004 1 292-296 5
source	Enthalten in Applied surface science 224(2004), 1, Seite 292-296 volume:224 year:2004 number:1 pages:292-296 extent:5
sourceStr	Enthalten in Applied surface science 224(2004), 1, Seite 292-296 volume:224 year:2004 number:1 pages:292-296 extent:5
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	670
isfreeaccess_bool	false
container_title	Applied surface science
authorswithroles_txt_mv	Loo, Roger @@aut@@ Collaert, Nadine @@oth@@ Verheyen, Peter @@oth@@ Caymax, Matty @@oth@@ Delhougne, Romain @@oth@@ Meyer, Kristin De @@oth@@
publishDateDaySort_date	2004-01-01T00:00:00Z
hierarchy_top_id	129187496
dewey-sort	3670
id	OLC165841733X
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC165841733X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230707121636.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">040220s2004 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw040219</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC165841733X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC165841733X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="a">530</subfield><subfield code="a">660</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Loo, Roger</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Collaert, Nadine</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Verheyen, Peter</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Caymax, Matty</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Delhougne, Romain</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meyer, Kristin De</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied surface science</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1985</subfield><subfield code="g">224(2004), 1, Seite 292-296</subfield><subfield code="w">(DE-627)129187496</subfield><subfield code="w">(DE-600)52886-9</subfield><subfield code="w">(DE-576)014456311</subfield><subfield code="x">0169-4332</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:224</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:292-296</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-DE-84</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">224</subfield><subfield code="j">2004</subfield><subfield code="e">1</subfield><subfield code="h">292-296</subfield><subfield code="g">5</subfield></datafield></record></collection>
author	Loo, Roger
spellingShingle	Loo, Roger ddc 670 Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
authorStr	Loo, Roger
ppnlink_with_tag_str_mv	@@773@@(DE-627)129187496
format	Article
dewey-ones	670 - Manufacturing 530 - Physics 660 - Chemical engineering
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0169-4332
topic_title	670 530 660 Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
topic	ddc 670
topic_unstemmed	ddc 670
topic_browse	ddc 670
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	n c nc p v pv m c mc r d rd k d m kd kdm
hierarchy_parent_title	Applied surface science
hierarchy_parent_id	129187496
dewey-tens	670 - Manufacturing 530 - Physics 660 - Chemical engineering
hierarchy_top_title	Applied surface science
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129187496 (DE-600)52886-9 (DE-576)014456311
title	Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
ctrlnum	(DE-627)OLC165841733X (DE-599)GBVOLC165841733X
title_full	Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
author_sort	Loo, Roger
journal	Applied surface science
journalStr	Applied surface science
isOA_bool	false
dewey-hundreds	600 - Technology 500 - Science
recordtype	marc
publishDateSort	2004
contenttype_str_mv	txt
container_start_page	292
author_browse	Loo, Roger
container_volume	224
physical	5
class	670 530 660
format_se	Aufsätze
author-letter	Loo, Roger
dewey-full	670 530 660
title_sort	fabrication of 50 nm high performance strained-sige pmosfets with selective epitaxial growth
title_auth	Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_24 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_4266
container_issue	1
title_short	Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
remote_bool	false
author2	Collaert, Nadine Verheyen, Peter Caymax, Matty Delhougne, Romain Meyer, Kristin De
author2Str	Collaert, Nadine Verheyen, Peter Caymax, Matty Delhougne, Romain Meyer, Kristin De
ppnlink	129187496
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth
up_date	2024-07-03T15:14:14.587Z
_version_	1803571329329266689
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC165841733X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230707121636.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">040220s2004 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw040219</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC165841733X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC165841733X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="a">530</subfield><subfield code="a">660</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Loo, Roger</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Collaert, Nadine</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Verheyen, Peter</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Caymax, Matty</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Delhougne, Romain</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meyer, Kristin De</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied surface science</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1985</subfield><subfield code="g">224(2004), 1, Seite 292-296</subfield><subfield code="w">(DE-627)129187496</subfield><subfield code="w">(DE-600)52886-9</subfield><subfield code="w">(DE-576)014456311</subfield><subfield code="x">0169-4332</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:224</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:292-296</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-DE-84</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">224</subfield><subfield code="j">2004</subfield><subfield code="e">1</subfield><subfield code="h">292-296</subfield><subfield code="g">5</subfield></datafield></record></collection>
score	7.401124

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