SEMICONDUCTOR TECHNOLOGY - Non-quasi-static model for MOSFET based on carrier-transit delay

Gespeichert in:

Autor*in:	Nakayama, N. [verfasserIn] Navarro, D. Tanaka, M. Ueno, H. Miura-Mattausch, M. Mattausch, H.J. Ohguro, T. Kumashiro, S. Taguchi, M.

Format:	Artikel

Erschienen:	2004

Umfang:	2

Übergeordnetes Werk:	Enthalten in: Electronics letters - Stevenage : IET, 1965, 40(2004), 4, Seite 276-277
Übergeordnetes Werk:	volume:40 ; year:2004 ; number:4 ; pages:276-277 ; extent:2

Katalog-ID:	OLC1659539749

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spelling	sw040309 (DE-627)OLC1659539749 (DE-599)GBVOLC1659539749 DE-627 ger DE-627 rakwb 620 Nakayama, N. verfasserin aut SEMICONDUCTOR TECHNOLOGY - Non-quasi-static model for MOSFET based on carrier-transit delay 2004 2 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Navarro, D. oth Tanaka, M. oth Ueno, H. oth Miura-Mattausch, M. oth Mattausch, H.J. oth Ohguro, T. oth Kumashiro, S. oth Taguchi, M. oth Enthalten in Electronics letters Stevenage : IET, 1965 40(2004), 4, Seite 276-277 (DE-627)129536180 (DE-600)216217-9 (DE-576)014966573 0013-5194 nnns volume:40 year:2004 number:4 pages:276-277 extent:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_95 GBV_ILN_147 GBV_ILN_170 GBV_ILN_185 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2064 GBV_ILN_4036 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4318 GBV_ILN_4319 AR 40 2004 4 276-277 2
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