Semiconductors I: Bulk - Evolution of voids in Al+ -implanted ZnO probed by a slow positron beam (10 pages)

Gespeichert in:

Autor*in:	Chen, Z.Q. [verfasserIn] Maekawa, M. Yamamoto, S. Kawasuso, A. Yuan, X.L. Sekiguchi, T. Suzuki, R. Ohdaira, T.

Format:	Artikel

Erschienen:	2004

Systematik:	UA 6500.

Umfang:	91

Übergeordnetes Werk:	Enthalten in: Physical review / B - Ridge, NY : APS, 1970, 69(2004), 3, Seite 35210-35300
Übergeordnetes Werk:	volume:69 ; year:2004 ; number:3 ; pages:35210-35300 ; extent:91

Katalog-ID:	OLC1659995647

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title	Semiconductors I: Bulk - Evolution of voids in Al+ -implanted ZnO probed by a slow positron beam (10 pages)
ctrlnum	(DE-627)OLC1659995647 (DE-599)GBVOLC1659995647
title_full	Semiconductors I: Bulk - Evolution of voids in Al+ -implanted ZnO probed by a slow positron beam (10 pages)
author_sort	Chen, Z.Q.
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physical	91
class	530 UA 6500. AVZ rvk
format_se	Aufsätze
author-letter	Chen, Z.Q.
dewey-full	530
title_sort	semiconductors i: bulk - evolution of voids in al+ -implanted zno probed by a slow positron beam (10 pages)
title_auth	Semiconductors I: Bulk - Evolution of voids in Al+ -implanted ZnO probed by a slow positron beam (10 pages)
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container_issue	3
title_short	Semiconductors I: Bulk - Evolution of voids in Al+ -implanted ZnO probed by a slow positron beam (10 pages)
remote_bool	false
author2	Maekawa, M. Yamamoto, S. Kawasuso, A. Yuan, X.L. Sekiguchi, T. Suzuki, R. Ohdaira, T.
author2Str	Maekawa, M. Yamamoto, S. Kawasuso, A. Yuan, X.L. Sekiguchi, T. Suzuki, R. Ohdaira, T.
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up_date	2024-07-03T18:46:39.424Z
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