Semiconductors - Internal Stress in Polycrystalline Si Film Recrystallized by Excimer Laser Annealing (Short Note)

Gespeichert in:

Autor*in:	Matsuo, Naoto [verfasserIn] Kawamoto, Naoya Hamada, Hiroki

Format:	Artikel

Erschienen:	2004

Systematik:	UA 4210.

Umfang:	2

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 43(2004), 2, Seite 532-533
Übergeordnetes Werk:	volume:43 ; year:2004 ; number:2 ; pages:532-533 ; extent:2

Katalog-ID:	OLC1663430357

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Semiconductors - Internal Stress in Polycrystalline Si Film Recrystallized by Excimer Laser Annealing (Short Note)

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