NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications

Gespeichert in:

Autor*in:	Chung, H.Y.A. [verfasserIn] Dietl, W. Niess, J. Nényei, Z. Lerch, W. Wieczorek, K. Krumm, N. Ludsteck, A. Eisele, I.

Format:	Artikel

Erschienen:	2005

Systematik:	VA 5950.

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Materials science and engineering / B - Amsterdam [u.a.] : Elsevier, 1988, 118(2005), 1, Seite 55-59
Übergeordnetes Werk:	volume:118 ; year:2005 ; number:1 ; pages:55-59 ; extent:5

Katalog-ID:	OLC1670253953

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