Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation

Gespeichert in:

Autor*in:	Kohli, P. [verfasserIn] Jain, A. Chakravarthi, S. Bu, H. Dunham, S.T. Banerjee, S.

Format:	Artikel

Erschienen:	2005

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 97(2005), 7, Seite 73520
Übergeordnetes Werk:	volume:97 ; year:2005 ; number:7 ; pages:73520 ; extent:1

Katalog-ID:	OLC1670619796

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Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation

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