High-current AlInN-GaN field effect transistors

Gespeichert in:

Autor*in:	Dadgar, A. [verfasserIn] Neuburger, M. Schulze, F. Bläsing, J. Krtschil, A. Daumiller, I. Kunze, M. Günther, K.-M. Witte, H.

Format:	Artikel

Erschienen:	2005

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Physica status solidi. A, Applications and materials science - Berlin : Wiley-VCH, 1970, 202(2005), 5, Seite 832-836
Übergeordnetes Werk:	volume:202 ; year:2005 ; number:5 ; pages:832-836 ; extent:5

Katalog-ID:	OLC1670845419

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allfieldsGer	sw050414 (DE-627)OLC1670845419 (DE-599)GBVOLC1670845419 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Dadgar, A. verfasserin aut High-current AlInN-GaN field effect transistors 2005 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Neuburger, M. oth Schulze, F. oth Bläsing, J. oth Krtschil, A. oth Daumiller, I. oth Kunze, M. oth Günther, K.-M. oth Witte, H. oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 202(2005), 5, Seite 832-836 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:202 year:2005 number:5 pages:832-836 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2020 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 33.60 AVZ 51.00 AVZ AR 202 2005 5 832-836 5
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High-current AlInN-GaN field effect transistors

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