Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine

Gespeichert in:

Autor*in:	Goh, K.E.J. [verfasserIn] Oberbeck, L. Simmons, M.Y.

Format:	Artikel

Erschienen:	2005

Umfang:	7

Übergeordnetes Werk:	Enthalten in: Physica status solidi. A, Applications and materials science - Berlin : Wiley-VCH, 1970, 202(2005), 6, Seite 1002-1008
Übergeordnetes Werk:	volume:202 ; year:2005 ; number:6 ; pages:1002-1008 ; extent:7

Katalog-ID:	OLC1672590299

Internformat


LEADER	01000caa a22002652 4500
001	OLC1672590299
003	DE-627
005	20220222032413.0
007	tu
008	050518s2005 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw050518
035			\|a (DE-627)OLC1672590299
035			\|a (DE-599)GBVOLC1672590299
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 530
084			\|a 33.60 \|2 bkl
084			\|a 51.00 \|2 bkl
100	1		\|a Goh, K.E.J. \|e verfasserin \|4 aut
245	1	0	\|a Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine
264		1	\|c 2005
300			\|a 7
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Oberbeck, L. \|4 oth
700	1		\|a Simmons, M.Y. \|4 oth
773	0	8	\|i Enthalten in \|t Physica status solidi. A, Applications and materials science \|d Berlin : Wiley-VCH, 1970 \|g 202(2005), 6, Seite 1002-1008 \|w (DE-627)129503932 \|w (DE-600)208850-2 \|w (DE-576)014907240 \|x 1862-6300 \|7 nnns
773	1	8	\|g volume:202 \|g year:2005 \|g number:6 \|g pages:1002-1008 \|g extent:7
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a SSG-OLC-PHY
912			\|a GBV_ILN_20
912			\|a GBV_ILN_21
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_62
912			\|a GBV_ILN_65
912			\|a GBV_ILN_70
912			\|a GBV_ILN_130
912			\|a GBV_ILN_267
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_4277
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4318
936	b	k	\|a 33.60 \|q AVZ
936	b	k	\|a 51.00 \|q AVZ
951			\|a AR
952			\|d 202 \|j 2005 \|e 6 \|h 1002-1008 \|g 7

Indexfelder

author_variant	k g kg
matchkey_str	article:18626300:2005----::eeacopopouicroainnhdoermvlospdpdae
hierarchy_sort_str	2005
bklnumber	33.60 51.00
publishDate	2005
allfields	sw050518 (DE-627)OLC1672590299 (DE-599)GBVOLC1672590299 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Goh, K.E.J. verfasserin aut Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Oberbeck, L. oth Simmons, M.Y. oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 202(2005), 6, Seite 1002-1008 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:202 year:2005 number:6 pages:1002-1008 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2020 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 33.60 AVZ 51.00 AVZ AR 202 2005 6 1002-1008 7
spelling	sw050518 (DE-627)OLC1672590299 (DE-599)GBVOLC1672590299 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Goh, K.E.J. verfasserin aut Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Oberbeck, L. oth Simmons, M.Y. oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 202(2005), 6, Seite 1002-1008 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:202 year:2005 number:6 pages:1002-1008 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2020 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 33.60 AVZ 51.00 AVZ AR 202 2005 6 1002-1008 7
allfields_unstemmed	sw050518 (DE-627)OLC1672590299 (DE-599)GBVOLC1672590299 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Goh, K.E.J. verfasserin aut Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Oberbeck, L. oth Simmons, M.Y. oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 202(2005), 6, Seite 1002-1008 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:202 year:2005 number:6 pages:1002-1008 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2020 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 33.60 AVZ 51.00 AVZ AR 202 2005 6 1002-1008 7
allfieldsGer	sw050518 (DE-627)OLC1672590299 (DE-599)GBVOLC1672590299 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Goh, K.E.J. verfasserin aut Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Oberbeck, L. oth Simmons, M.Y. oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 202(2005), 6, Seite 1002-1008 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:202 year:2005 number:6 pages:1002-1008 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2020 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 33.60 AVZ 51.00 AVZ AR 202 2005 6 1002-1008 7
allfieldsSound	sw050518 (DE-627)OLC1672590299 (DE-599)GBVOLC1672590299 DE-627 ger DE-627 rakwb 530 33.60 bkl 51.00 bkl Goh, K.E.J. verfasserin aut Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Oberbeck, L. oth Simmons, M.Y. oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 202(2005), 6, Seite 1002-1008 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:202 year:2005 number:6 pages:1002-1008 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2020 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318 33.60 AVZ 51.00 AVZ AR 202 2005 6 1002-1008 7
source	Enthalten in Physica status solidi. A, Applications and materials science 202(2005), 6, Seite 1002-1008 volume:202 year:2005 number:6 pages:1002-1008 extent:7
sourceStr	Enthalten in Physica status solidi. A, Applications and materials science 202(2005), 6, Seite 1002-1008 volume:202 year:2005 number:6 pages:1002-1008 extent:7
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	530
isfreeaccess_bool	false
container_title	Physica status solidi. A, Applications and materials science
authorswithroles_txt_mv	Goh, K.E.J. @@aut@@ Oberbeck, L. @@oth@@ Simmons, M.Y. @@oth@@
publishDateDaySort_date	2005-01-01T00:00:00Z
hierarchy_top_id	129503932
dewey-sort	3530
id	OLC1672590299
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1672590299</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220222032413.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">050518s2005 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw050518</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1672590299</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1672590299</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Goh, K.E.J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Oberbeck, L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Simmons, M.Y.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physica status solidi. A, Applications and materials science</subfield><subfield code="d">Berlin : Wiley-VCH, 1970</subfield><subfield code="g">202(2005), 6, Seite 1002-1008</subfield><subfield code="w">(DE-627)129503932</subfield><subfield code="w">(DE-600)208850-2</subfield><subfield code="w">(DE-576)014907240</subfield><subfield code="x">1862-6300</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:202</subfield><subfield code="g">year:2005</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:1002-1008</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_267</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.60</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">202</subfield><subfield code="j">2005</subfield><subfield code="e">6</subfield><subfield code="h">1002-1008</subfield><subfield code="g">7</subfield></datafield></record></collection>
author	Goh, K.E.J.
spellingShingle	Goh, K.E.J. ddc 530 bkl 33.60 bkl 51.00 Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine
authorStr	Goh, K.E.J.
ppnlink_with_tag_str_mv	@@773@@(DE-627)129503932
format	Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	1862-6300
topic_title	530 33.60 bkl 51.00 bkl Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine
topic	ddc 530 bkl 33.60 bkl 51.00
topic_unstemmed	ddc 530 bkl 33.60 bkl 51.00
topic_browse	ddc 530 bkl 33.60 bkl 51.00
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	l o lo m s ms
hierarchy_parent_title	Physica status solidi. A, Applications and materials science
hierarchy_parent_id	129503932
dewey-tens	530 - Physics
hierarchy_top_title	Physica status solidi. A, Applications and materials science
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129503932 (DE-600)208850-2 (DE-576)014907240
title	Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine
ctrlnum	(DE-627)OLC1672590299 (DE-599)GBVOLC1672590299
title_full	Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine
author_sort	Goh, K.E.J.
journal	Physica status solidi. A, Applications and materials science
journalStr	Physica status solidi. A, Applications and materials science
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2005
contenttype_str_mv	txt
container_start_page	1002
author_browse	Goh, K.E.J.
container_volume	202
physical	7
class	530 33.60 bkl 51.00 bkl
format_se	Aufsätze
author-letter	Goh, K.E.J.
dewey-full	530
title_sort	relevance of phosphorus incorporation and hydrogen removal for si:p d-doped layers fabricated using phosphine
title_auth	Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_130 GBV_ILN_267 GBV_ILN_2020 GBV_ILN_4277 GBV_ILN_4313 GBV_ILN_4318
container_issue	6
title_short	Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine
remote_bool	false
author2	Oberbeck, L. Simmons, M.Y.
author2Str	Oberbeck, L. Simmons, M.Y.
ppnlink	129503932
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth
up_date	2024-07-03T23:17:24.702Z
_version_	1803601727669141504
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1672590299</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220222032413.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">050518s2005 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw050518</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1672590299</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1672590299</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Goh, K.E.J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Oberbeck, L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Simmons, M.Y.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physica status solidi. A, Applications and materials science</subfield><subfield code="d">Berlin : Wiley-VCH, 1970</subfield><subfield code="g">202(2005), 6, Seite 1002-1008</subfield><subfield code="w">(DE-627)129503932</subfield><subfield code="w">(DE-600)208850-2</subfield><subfield code="w">(DE-576)014907240</subfield><subfield code="x">1862-6300</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:202</subfield><subfield code="g">year:2005</subfield><subfield code="g">number:6</subfield><subfield code="g">pages:1002-1008</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_267</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.60</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">202</subfield><subfield code="j">2005</subfield><subfield code="e">6</subfield><subfield code="h">1002-1008</subfield><subfield code="g">7</subfield></datafield></record></collection>
score	7.401332

Nicht das Richtige dabei?

Schreiben Sie uns!

Relevance of phosphorus incorporation and hydrogen removal for Si:P d-doped layers fabricated using phosphine

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?