InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

Gespeichert in:

Autor*in:	Hooper, S.E. [verfasserIn] Kauer, M. Bousquet, V. Johnson, K. Zellweger, C. Heffernan, J.

Format:	Artikel

Erschienen:	2005

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 278(2005), 1-4, Seite 361-366
Übergeordnetes Werk:	volume:278 ; year:2005 ; number:1-4 ; pages:361-366 ; extent:6

Katalog-ID:	OLC1672884519

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allfieldsSound	sw050520 (DE-627)OLC1672884519 (DE-599)GBVOLC1672884519 DE-627 ger DE-627 rakwb 540 Hooper, S.E. verfasserin aut InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy 2005 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kauer, M. oth Bousquet, V. oth Johnson, K. oth Zellweger, C. oth Heffernan, J. oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 278(2005), 1-4, Seite 361-366 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:278 year:2005 number:1-4 pages:361-366 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_30 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4012 AR 278 2005 1-4 361-366 6
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