Semiconductor Devices, Materials, and Processing - Optimization of Thin, Nitrogen-Rich Silicon Oxynitrides Grown by Rapid Thermal Nitridation

Gespeichert in:

Autor*in:	Ludsteck, A. [verfasserIn] Schulze, J. Eisele, I. Dietl, W. Chung, H. Nenyei, Z. Bergmaier, A. Dollinger, G.

Format:	Artikel

Erschienen:	2005

Systematik:	VA 4000

Übergeordnetes Werk:	Enthalten in: Journal of the Electrochemical Society - Pennington, NJ : Electrochemical Society, 1948, 152(2005), 5, Seite G334
Übergeordnetes Werk:	volume:152 ; year:2005 ; number:5 ; pages:G334

Katalog-ID:	OLC1674905734

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spelling	sw050623 (DE-627)OLC1674905734 (DE-599)GBVOLC1674905734 DE-627 ger DE-627 rakwb 540 620 660 VA 4000 AVZ rvk Ludsteck, A. verfasserin aut Semiconductor Devices, Materials, and Processing - Optimization of Thin, Nitrogen-Rich Silicon Oxynitrides Grown by Rapid Thermal Nitridation 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Schulze, J. oth Eisele, I. oth Dietl, W. oth Chung, H. oth Nenyei, Z. oth Bergmaier, A. oth Dollinger, G. oth Enthalten in Journal of the Electrochemical Society Pennington, NJ : Electrochemical Society, 1948 152(2005), 5, Seite G334 (DE-627)129550302 (DE-600)219244-5 (DE-576)015003728 0013-4651 nnns volume:152 year:2005 number:5 pages:G334 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_215 GBV_ILN_2001 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2240 GBV_ILN_2241 GBV_ILN_4012 GBV_ILN_4116 GBV_ILN_4318 GBV_ILN_4323 GBV_ILN_4700 VA 4000 AR 152 2005 5 G334
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