Study of nanocrystalline TiN-Si3N4 thin films deposited using a dual ion beam method

Gespeichert in:

Autor*in:	Colligon, J.S. [verfasserIn] Vishnyakov, V. Valizadeh, R. Donnelly, S.E. Kumashiro, S.

Format:	Artikel

Erschienen:	2005

Umfang:	7

Übergeordnetes Werk:	Enthalten in: Thin solid films - Amsterdam [u.a.] Elsevier, 1967, 485(2005), 1, Seite 148-154
Übergeordnetes Werk:	volume:485 ; year:2005 ; number:1 ; pages:148-154 ; extent:7

Katalog-ID:	OLC1675513406

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spelling	sw050705 (DE-627)OLC1675513406 (DE-599)GBVOLC1675513406 DE-627 ger DE-627 rakwb 050 530 530 AVZ Colligon, J.S. verfasserin aut Study of nanocrystalline TiN-Si3N4 thin films deposited using a dual ion beam method 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vishnyakov, V. oth Valizadeh, R. oth Donnelly, S.E. oth Kumashiro, S. oth Enthalten in Thin solid films Amsterdam [u.a.] Elsevier, 1967 485(2005), 1, Seite 148-154 (DE-627)129522287 (DE-600)212814-7 (DE-576)014938588 0040-6090 nnns volume:485 year:2005 number:1 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_21 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2001 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2279 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4700 AR 485 2005 1 148-154 7
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allfieldsGer	sw050705 (DE-627)OLC1675513406 (DE-599)GBVOLC1675513406 DE-627 ger DE-627 rakwb 050 530 530 AVZ Colligon, J.S. verfasserin aut Study of nanocrystalline TiN-Si3N4 thin films deposited using a dual ion beam method 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vishnyakov, V. oth Valizadeh, R. oth Donnelly, S.E. oth Kumashiro, S. oth Enthalten in Thin solid films Amsterdam [u.a.] Elsevier, 1967 485(2005), 1, Seite 148-154 (DE-627)129522287 (DE-600)212814-7 (DE-576)014938588 0040-6090 nnns volume:485 year:2005 number:1 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_21 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2001 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2279 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4700 AR 485 2005 1 148-154 7
allfieldsSound	sw050705 (DE-627)OLC1675513406 (DE-599)GBVOLC1675513406 DE-627 ger DE-627 rakwb 050 530 530 AVZ Colligon, J.S. verfasserin aut Study of nanocrystalline TiN-Si3N4 thin films deposited using a dual ion beam method 2005 7 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Vishnyakov, V. oth Valizadeh, R. oth Donnelly, S.E. oth Kumashiro, S. oth Enthalten in Thin solid films Amsterdam [u.a.] Elsevier, 1967 485(2005), 1, Seite 148-154 (DE-627)129522287 (DE-600)212814-7 (DE-576)014938588 0040-6090 nnns volume:485 year:2005 number:1 pages:148-154 extent:7 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_21 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2001 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2279 GBV_ILN_4116 GBV_ILN_4126 GBV_ILN_4700 AR 485 2005 1 148-154 7
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Study of nanocrystalline TiN-Si3N4 thin films deposited using a dual ion beam method

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