Z-contrast imaging of AlN exclusion layers in GaN field-effect transistors

Gespeichert in:

Autor*in:	Wallis, D.J. [verfasserIn] Balmer, R.S. Keir, A.M. Martin, T.

Format:	Artikel

Erschienen:	2005

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 87(2005), 4, Seite 42101
Übergeordnetes Werk:	volume:87 ; year:2005 ; number:4 ; pages:42101 ; extent:1

Katalog-ID:	OLC1677143630

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Z-contrast imaging of AlN exclusion layers in GaN field-effect transistors

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