Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors

Gespeichert in:

Autor*in:	Hosokawa, S. [verfasserIn] Navarro, D. Miura-Mattausch, M. Mattausch, H.J. Ohguro, T. Iizuka, T. Taguchi, M. Kumashiro, S. Miyamoto, S.

Format:	Artikel

Erschienen:	2005

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 87(2005), 9, Seite 92104
Übergeordnetes Werk:	volume:87 ; year:2005 ; number:9 ; pages:92104 ; extent:1

Katalog-ID:	OLC1679064231

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title_sort	gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors
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Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors

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