RADIATION DAMAGE EFFECTS - Response of SOI Bipolar Transistors Exposed to g-Rays Under Different Dose Rate and Bias Conditions

Gespeichert in:

Autor*in:	Ratti, L. [verfasserIn] Manghisoni, M. Oberti, E. Re, V. Speziali, V. Traversi, G. Fallica, G. Modica, R.

Format:	Artikel

Erschienen:	2005

Umfang:	8

Übergeordnetes Werk:	Enthalten in: IEEE transactions on nuclear science - New York, NY : IEEE, 1963, 52(2005), 4, Seite 1040-1047
Übergeordnetes Werk:	volume:52 ; year:2005 ; number:4 ; pages:1040-1047 ; extent:8

Katalog-ID:	OLC1680030701

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allfields	sw050930 (DE-627)OLC1680030701 (DE-599)GBVOLC1680030701 DE-627 ger DE-627 rakwb 620 Ratti, L. verfasserin aut RADIATION DAMAGE EFFECTS - Response of SOI Bipolar Transistors Exposed to g-Rays Under Different Dose Rate and Bias Conditions 2005 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Manghisoni, M. oth Oberti, E. oth Re, V. oth Speziali, V. oth Traversi, G. oth Fallica, G. oth Modica, R. oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 52(2005), 4, Seite 1040-1047 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:52 year:2005 number:4 pages:1040-1047 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_21 GBV_ILN_23 GBV_ILN_40 GBV_ILN_47 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2181 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4317 GBV_ILN_4318 AR 52 2005 4 1040-1047 8
spelling	sw050930 (DE-627)OLC1680030701 (DE-599)GBVOLC1680030701 DE-627 ger DE-627 rakwb 620 Ratti, L. verfasserin aut RADIATION DAMAGE EFFECTS - Response of SOI Bipolar Transistors Exposed to g-Rays Under Different Dose Rate and Bias Conditions 2005 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Manghisoni, M. oth Oberti, E. oth Re, V. oth Speziali, V. oth Traversi, G. oth Fallica, G. oth Modica, R. oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 52(2005), 4, Seite 1040-1047 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:52 year:2005 number:4 pages:1040-1047 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_21 GBV_ILN_23 GBV_ILN_40 GBV_ILN_47 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2181 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4317 GBV_ILN_4318 AR 52 2005 4 1040-1047 8
allfields_unstemmed	sw050930 (DE-627)OLC1680030701 (DE-599)GBVOLC1680030701 DE-627 ger DE-627 rakwb 620 Ratti, L. verfasserin aut RADIATION DAMAGE EFFECTS - Response of SOI Bipolar Transistors Exposed to g-Rays Under Different Dose Rate and Bias Conditions 2005 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Manghisoni, M. oth Oberti, E. oth Re, V. oth Speziali, V. oth Traversi, G. oth Fallica, G. oth Modica, R. oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 52(2005), 4, Seite 1040-1047 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:52 year:2005 number:4 pages:1040-1047 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_21 GBV_ILN_23 GBV_ILN_40 GBV_ILN_47 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2181 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4317 GBV_ILN_4318 AR 52 2005 4 1040-1047 8
allfieldsGer	sw050930 (DE-627)OLC1680030701 (DE-599)GBVOLC1680030701 DE-627 ger DE-627 rakwb 620 Ratti, L. verfasserin aut RADIATION DAMAGE EFFECTS - Response of SOI Bipolar Transistors Exposed to g-Rays Under Different Dose Rate and Bias Conditions 2005 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Manghisoni, M. oth Oberti, E. oth Re, V. oth Speziali, V. oth Traversi, G. oth Fallica, G. oth Modica, R. oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 52(2005), 4, Seite 1040-1047 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:52 year:2005 number:4 pages:1040-1047 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_21 GBV_ILN_23 GBV_ILN_40 GBV_ILN_47 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2181 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4317 GBV_ILN_4318 AR 52 2005 4 1040-1047 8
allfieldsSound	sw050930 (DE-627)OLC1680030701 (DE-599)GBVOLC1680030701 DE-627 ger DE-627 rakwb 620 Ratti, L. verfasserin aut RADIATION DAMAGE EFFECTS - Response of SOI Bipolar Transistors Exposed to g-Rays Under Different Dose Rate and Bias Conditions 2005 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Manghisoni, M. oth Oberti, E. oth Re, V. oth Speziali, V. oth Traversi, G. oth Fallica, G. oth Modica, R. oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 52(2005), 4, Seite 1040-1047 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:52 year:2005 number:4 pages:1040-1047 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_21 GBV_ILN_23 GBV_ILN_40 GBV_ILN_47 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2014 GBV_ILN_2181 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4317 GBV_ILN_4318 AR 52 2005 4 1040-1047 8
source	Enthalten in IEEE transactions on nuclear science 52(2005), 4, Seite 1040-1047 volume:52 year:2005 number:4 pages:1040-1047 extent:8
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title_sort	radiation damage effects - response of soi bipolar transistors exposed to g-rays under different dose rate and bias conditions
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RADIATION DAMAGE EFFECTS - Response of SOI Bipolar Transistors Exposed to g-Rays Under Different Dose Rate and Bias Conditions

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