Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots

Gespeichert in:

Autor*in:	Turchanikov, V.I. [verfasserIn] Nazarov, A.N. Lysenko, V.S. Winkler, O. Spangenberg, B. Kurz, H.

Format:	Artikel

Erschienen:	2005

Systematik:	VA 5950.

Umfang:	4

Übergeordnetes Werk:	Enthalten in: Materials science and engineering / B - Amsterdam [u.a.] : Elsevier, 1988, 124(2005), Seite 517-520
Übergeordnetes Werk:	volume:124 ; year:2005 ; pages:517-520 ; extent:4

Katalog-ID:	OLC1689240210

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