Auger electron spectroscopy study of reactive ion etched silicon carbide

Gespeichert in:

Autor*in:	Xia, J.H. [verfasserIn] Rusli Choy, S.F. Gopalakrishan, R. Tin, C.C. Ahn, J. Yoon, S.F.

Format:	Artikel

Erschienen:	2006

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Microelectronic engineering - Amsterdam [u.a.] : Elsevier, 1983, 83(2006), 1, Seite 12-16
Übergeordnetes Werk:	volume:83 ; year:2006 ; number:1 ; pages:12-16 ; extent:5

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Auger electron spectroscopy study of reactive ion etched silicon carbide

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