Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates

Gespeichert in:

Autor*in:	Smeeton, T.M. [verfasserIn] Bousquet, V. Hooper, S.E. Kauer, M. Heffernan, J.

Format:	Artikel

Erschienen:	2006

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 88(2006), 4, Seite 41910
Übergeordnetes Werk:	volume:88 ; year:2006 ; number:4 ; pages:41910 ; extent:1

Katalog-ID:	OLC1692431641

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Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates

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