Time-dependent degradation due to negative bias temperature instability of p-MOSFET with an ultra-thin SiON gate dielectric

Gespeichert in:

Autor*in:	Han, S.U. [verfasserIn] Kang, H.S. Kang, B.K.

Format:	Artikel

Erschienen:	2006

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Microelectronic engineering - Amsterdam [u.a.] : Elsevier, 1983, 83(2006), 3, Seite 520-527
Übergeordnetes Werk:	volume:83 ; year:2006 ; number:3 ; pages:520-527 ; extent:8

Katalog-ID:	OLC1693417693

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