Silicon Devices - A Study of Hot-Hole Injection During Programming Drain Disturb in Flash Memories
Autor*in: |
Ielmini, D. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
2006 |
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Umfang: |
9 |
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Übergeordnetes Werk: |
Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 53(2006), 4, Seite 668-676 |
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Übergeordnetes Werk: |
volume:53 ; year:2006 ; number:4 ; pages:668-676 ; extent:9 |
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sw060418 (DE-627)OLC1696114748 (DE-599)GBVOLC1696114748 DE-627 ger DE-627 rakwb 620 Ielmini, D. verfasserin aut Silicon Devices - A Study of Hot-Hole Injection During Programming Drain Disturb in Flash Memories 2006 9 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ghetti, A. oth Spinelli, A.S. oth Visconti, A. oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 53(2006), 4, Seite 668-676 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:53 year:2006 number:4 pages:668-676 extent:9 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_70 GBV_ILN_100 GBV_ILN_170 GBV_ILN_2002 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4314 GBV_ILN_4317 GBV_ILN_4318 AR 53 2006 4 668-676 9 |
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