Influence of trap states on dynamic properties of single grain silicon thin film transistors

Gespeichert in:

Autor*in:	Yan, F. [verfasserIn] Migliorato, P. Ishihara, R.

Format:	Artikel

Erschienen:	2006

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 88(2006), 15, Seite 153507
Übergeordnetes Werk:	volume:88 ; year:2006 ; number:15 ; pages:153507 ; extent:1

Katalog-ID:	OLC1696673542

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allfieldsSound	sw060426 (DE-627)OLC1696673542 (DE-599)GBVOLC1696673542 DE-627 ger DE-627 rakwb 530 Yan, F. verfasserin aut Influence of trap states on dynamic properties of single grain silicon thin film transistors 2006 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Migliorato, P. oth Ishihara, R. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 88(2006), 15, Seite 153507 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:88 year:2006 number:15 pages:153507 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_55 GBV_ILN_60 GBV_ILN_62 GBV_ILN_70 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 88 2006 15 153507 1
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Influence of trap states on dynamic properties of single grain silicon thin film transistors

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