Electron transport properties of a strained Si layer on a relaxed Si1-xGex substrate by Monte Carlo simulation

Gespeichert in:

Autor*in:	Miyata, H. [verfasserIn] Yamada, Toshishige Ferry, D.K.

Format:	Artikel

Erschienen:	1993

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 62(1993), 21, Seite 2661-2663
Übergeordnetes Werk:	volume:62 ; year:1993 ; number:21 ; pages:2661-2663 ; extent:3

Katalog-ID:	OLC1698988753

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Electron transport properties of a strained Si layer on a relaxed Si1-xGex substrate by Monte Carlo simulation

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