Modeling of piezo-Hall effects in n-doped silicon devices

Gespeichert in:

Autor*in:	Nathan, A. [verfasserIn] Manku, T.

Format:	Artikel

Erschienen:	1993

Umfang:	3

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 62(1993), 23, Seite 2947-2949
Übergeordnetes Werk:	volume:62 ; year:1993 ; number:23 ; pages:2947-2949 ; extent:3

Katalog-ID:	OLC1698989660

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Modeling of piezo-Hall effects in n-doped silicon devices

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