InGaAs-InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD

Gespeichert in:

Autor*in:	Aoki, M. [verfasserIn] Suzuki, M. Sano, H. Kawano, T. Ido, T. Taniwatari, T. Uomi, K. Takai, A.

Format:	Artikel

Erschienen:	1993

Umfang:	9

Übergeordnetes Werk:	Enthalten in: IEEE journal of quantum electronics - New York, NY : IEEE, 1965, 29(1993), 6, Seite 2088-2096
Übergeordnetes Werk:	volume:29 ; year:1993 ; number:6 ; pages:2088-2096 ; extent:9

Katalog-ID:	OLC1701439867

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spelling	(DE-627)OLC1701439867 (DE-599)GBVOLC1701439867 DE-627 ger DE-627 rakwb 620 Aoki, M. verfasserin aut InGaAs-InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD 1993 9 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Suzuki, M. oth Sano, H. oth Kawano, T. oth Ido, T. oth Taniwatari, T. oth Uomi, K. oth Takai, A. oth Enthalten in IEEE journal of quantum electronics New York, NY : IEEE, 1965 29(1993), 6, Seite 2088-2096 (DE-627)12960299X (DE-600)241641-4 (DE-576)015096807 0018-9197 nnns volume:29 year:1993 number:6 pages:2088-2096 extent:9 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_120 GBV_ILN_130 GBV_ILN_170 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_4027 GBV_ILN_4035 GBV_ILN_4038 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 29 1993 6 2088-2096 9
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allfieldsSound	(DE-627)OLC1701439867 (DE-599)GBVOLC1701439867 DE-627 ger DE-627 rakwb 620 Aoki, M. verfasserin aut InGaAs-InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD 1993 9 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Suzuki, M. oth Sano, H. oth Kawano, T. oth Ido, T. oth Taniwatari, T. oth Uomi, K. oth Takai, A. oth Enthalten in IEEE journal of quantum electronics New York, NY : IEEE, 1965 29(1993), 6, Seite 2088-2096 (DE-627)12960299X (DE-600)241641-4 (DE-576)015096807 0018-9197 nnns volume:29 year:1993 number:6 pages:2088-2096 extent:9 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_120 GBV_ILN_130 GBV_ILN_170 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_4027 GBV_ILN_4035 GBV_ILN_4038 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 29 1993 6 2088-2096 9
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title	InGaAs-InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD
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title_full	InGaAs-InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD
author_sort	Aoki, M.
journal	IEEE journal of quantum electronics
journalStr	IEEE journal of quantum electronics
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	1993
contenttype_str_mv	txt
container_start_page	2088
author_browse	Aoki, M.
container_volume	29
physical	9
class	620
format_se	Aufsätze
author-letter	Aoki, M.
dewey-full	620
title_sort	ingaas-ingaasp mqw electroabsorption modulator integrated with a dfb laser fabricated by band-gap energy control selective area mocvd
title_auth	InGaAs-InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_59 GBV_ILN_70 GBV_ILN_120 GBV_ILN_130 GBV_ILN_170 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2016 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_4027 GBV_ILN_4035 GBV_ILN_4038 GBV_ILN_4046 GBV_ILN_4266 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4309 GBV_ILN_4310 GBV_ILN_4314 GBV_ILN_4315 GBV_ILN_4316 GBV_ILN_4317 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700
container_issue	6
title_short	InGaAs-InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD
remote_bool	false
author2	Suzuki, M. Sano, H. Kawano, T. Ido, T. Taniwatari, T. Uomi, K. Takai, A.
author2Str	Suzuki, M. Sano, H. Kawano, T. Ido, T. Taniwatari, T. Uomi, K. Takai, A.
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author2_role	oth oth oth oth oth oth oth
up_date	2024-07-03T17:18:58.634Z
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