In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl3 by Surface Photo-Absorption Method

Gespeichert in:

Autor*in:	Kobayashi, Ryuji [verfasserIn] Narahara, Satoru Ishikawa, Katsumi Hasegawa, Fumio

Format:	Artikel

Erschienen:	1993

Systematik:	UA 4210.

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 2, Letters & express letters - Tokyo : Ōyō Butsuri Gakkai, 1982, 32(1993), 2, A, Seite L164
Übergeordnetes Werk:	volume:32 ; year:1993 ; number:2 ; supplement:A ; pages:L164

Katalog-ID:	OLC1702894339

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In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl3 by Surface Photo-Absorption Method

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