Dislocation glide motion in heteroepitaxial thin films of Si1-xGex-Si(100)

Gespeichert in:

Autor*in:	Yamashita, Y. [verfasserIn] Maeda, K. Fujita, K. Usami, N. Suzuki, K. Fukatsu, S. Mera, Y. Shiraki, Y.

Format:	Artikel

Erschienen:	1993

Umfang:	8

Übergeordnetes Werk:	Enthalten in: Philosophical magazine. Letters - Abingdon, Oxfordshire : Taylor & Francis, 1987, 67(1993), 3, Seite 165-172
Übergeordnetes Werk:	volume:67 ; year:1993 ; number:3 ; pages:165-172 ; extent:8

Katalog-ID:	OLC1704249139

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allfields	(DE-627)OLC1704249139 (DE-599)GBVOLC1704249139 DE-627 ger DE-627 rakwb 070 530 33.60 bkl 51.00 bkl Yamashita, Y. verfasserin aut Dislocation glide motion in heteroepitaxial thin films of Si1-xGex-Si(100) 1993 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Maeda, K. oth Fujita, K. oth Usami, N. oth Suzuki, K. oth Fukatsu, S. oth Mera, Y. oth Shiraki, Y. oth Enthalten in Philosophical magazine. Letters Abingdon, Oxfordshire : Taylor & Francis, 1987 67(1993), 3, Seite 165-172 (DE-627)129383848 (DE-600)166035-4 (DE-576)014770873 0950-0839 nnns volume:67 year:1993 number:3 pages:165-172 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4028 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 33.60 AVZ 51.00 AVZ AR 67 1993 3 165-172 8
spelling	(DE-627)OLC1704249139 (DE-599)GBVOLC1704249139 DE-627 ger DE-627 rakwb 070 530 33.60 bkl 51.00 bkl Yamashita, Y. verfasserin aut Dislocation glide motion in heteroepitaxial thin films of Si1-xGex-Si(100) 1993 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Maeda, K. oth Fujita, K. oth Usami, N. oth Suzuki, K. oth Fukatsu, S. oth Mera, Y. oth Shiraki, Y. oth Enthalten in Philosophical magazine. Letters Abingdon, Oxfordshire : Taylor & Francis, 1987 67(1993), 3, Seite 165-172 (DE-627)129383848 (DE-600)166035-4 (DE-576)014770873 0950-0839 nnns volume:67 year:1993 number:3 pages:165-172 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4028 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 33.60 AVZ 51.00 AVZ AR 67 1993 3 165-172 8
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allfieldsGer	(DE-627)OLC1704249139 (DE-599)GBVOLC1704249139 DE-627 ger DE-627 rakwb 070 530 33.60 bkl 51.00 bkl Yamashita, Y. verfasserin aut Dislocation glide motion in heteroepitaxial thin films of Si1-xGex-Si(100) 1993 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Maeda, K. oth Fujita, K. oth Usami, N. oth Suzuki, K. oth Fukatsu, S. oth Mera, Y. oth Shiraki, Y. oth Enthalten in Philosophical magazine. Letters Abingdon, Oxfordshire : Taylor & Francis, 1987 67(1993), 3, Seite 165-172 (DE-627)129383848 (DE-600)166035-4 (DE-576)014770873 0950-0839 nnns volume:67 year:1993 number:3 pages:165-172 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4028 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 33.60 AVZ 51.00 AVZ AR 67 1993 3 165-172 8
allfieldsSound	(DE-627)OLC1704249139 (DE-599)GBVOLC1704249139 DE-627 ger DE-627 rakwb 070 530 33.60 bkl 51.00 bkl Yamashita, Y. verfasserin aut Dislocation glide motion in heteroepitaxial thin films of Si1-xGex-Si(100) 1993 8 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Maeda, K. oth Fujita, K. oth Usami, N. oth Suzuki, K. oth Fukatsu, S. oth Mera, Y. oth Shiraki, Y. oth Enthalten in Philosophical magazine. Letters Abingdon, Oxfordshire : Taylor & Francis, 1987 67(1993), 3, Seite 165-172 (DE-627)129383848 (DE-600)166035-4 (DE-576)014770873 0950-0839 nnns volume:67 year:1993 number:3 pages:165-172 extent:8 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2014 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4028 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4305 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 33.60 AVZ 51.00 AVZ AR 67 1993 3 165-172 8
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Dislocation glide motion in heteroepitaxial thin films of Si1-xGex-Si(100)

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